PMG85XP

TS SO P6 PMG85XP 20 V, 2 A P-channel Trench MOSFET Rev. 1 — 28 June 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology 1.3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = -4.5 V; Tj = 25 °C VGS = -4.5 V; ID = -2 A; Tj = 25 °C [1] Conditions Tj = 25 °C Min -12 - Typ 90 Max -20 12 -2 115 Unit V V A mΩ Static characteristics [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2. NXP Semiconductors PMG85XP 20 V, 2 A P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description D D G S D D drain drain gate source drain drain 1 2 3 S 017aaa094 Simplified outline 6 5 4 Graphic symbol D G SOT363 (TSSOP6) 3. Ordering information Table 3. Ordering information Package Name PMG85XP TSSOP6 Description plastic surface-mounted package; 6 leads Version SOT363 Type number 4. Marking Table 4. PMG85XP [1] % = placeholder for manufacturing site code Marking ...