NX3008CBKS

NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET Rev. 1 — 29 July 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in very small SOT363 (SC-88) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 1.2 Features and benefits  Low threshold voltage  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV  AEC-Q101 qualified 1.3 Applications  Level shifter  Power supply converter  Load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain current drain-source on-state resistance drain-source on-state resistance VGS = 4.5 V; Tamb = 25 °C VGS = 4.5 V; ID = 350 mA; Tj = 25 °C VGS = -4.5 V; ID = -200 mA; Tj = 25 °C [1] Conditions Tj = 25 °C VGS = -4.5 V; Tamb = 25 °C Tj = 25 °C [1] Min -8 -8 - Typ 1 Max -30 8 -200 30 8 350 1.4 Unit V V mA V V mA Ω TR2 (P-channel) TR1 (N-channel) TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon 2.8 4.1 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. NXP Semiconductors NX3008CBKS 30 / 30 V, 350 / 200 mA N/P-channel Trench MOSFET 2. Pinning information Table 2. Pin 1 2 3 4 5 6 Pinning information Symbol Description S1 G1 D2 ...