NX1029X

SO T6 NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 General description Complementary N/P-channel enhancement mode Field-Effect Transistor (FET) in an ultra small and flat lead SOT666 Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology. 66 1.2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD protection up to 2 kV (N-channel) and 1 kV (P-channel)  AEC-Q101 qualified 1.3 Applications  Level shifter  Power supply converter  Load switch  Switching circuits 1.4 Quick reference data Table 1. Symbol VDS VGS ID VDS VGS ID RDSon Quick reference data Parameter drain-source voltage gate-source voltage drain current drain-source voltage gate-source voltage drain current drain-source on-state resistance VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 500 mA; pulsed; tp ≤ 300 µs; δ ≤ 0.01 ; Tj = 25 °C VGS = -10 V; ID = -100 mA; Tj = 25 °C [1] Conditions Tj = 25 °C VGS = -10 V; Tamb = 25 °C Tj = 25 °C [1] Min -20 -20 - Typ 1 Max Unit -50 20 V V TR2 (P-channel) -170 mA 60 20 330 1.6 V V mA Ω TR1 (N-channel) TR1 (N-channel), Static characteristics TR2 (P-channel), Static characteristics RDSon drain-source on-state resistance 4.5 7.5 Ω [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and mounting pad for drain 1 cm2. NXP Semiconductors NX1029X 60 / 50 V, 330 / 170 mA N/P-channel Trench MOSFET 2. Pinning in...