IPD30N03S4L-09

IPD30N03S4L-09 OptiMOS®-T2 Power-Transistor Product Summary V DS R DS(on),max ID 30 9.0 30 PG-TO252-3-11 V mΩ A Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) 100% Avalanche tested Type IPD30N03S4L-09 Package PG-TO252-3-11 Marking 4N03L09 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25°C I D=30A T C=25°C Value 30 30 120 28 30 ±16 42 -55 ... +175 55/175/56 mJ A V W °C − Unit A Rev. 1.0 page 1 2008-08-20 IPD30N03S4L-09 Parameter Symbol Conditions min. Values typ. max. Unit Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0V, I D= 1mA V GS(th) I DSS V DS=V GS, I D=13µA V DS=30V, V GS=0V, T j=25°C V DS=30V, V GS=0V, T j=125°C2) Gate-source leakage current Drain-source on-state resistance I GSS R DS(on) V GS=16V, V DS...