IPD30N03S4L-14
OptiMOS®-T2 Power-Transistor
Product Summary V DS R DS(on),max ID 30 13.6 30 V mΩ A
Features • N-chann...
IPD30N03S4L-14
OptiMOS®-T2 Power-
Transistor
Product Summary V DS R DS(on),max ID 30 13.6 30 V mΩ A
Features N-channel - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green product (RoHS compliant) Ultra low Rds(on) 100% Avalanche tested PG-TO252-3-11
Type IPD70N03S4L-04
Package PG-TO252-3-11
Marking 4N03L04
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=30 A T C=25 °C Value 30 27 120 16 30 ±16 31 -55 ... +175 55/175/56 mJ A V W °C Unit A
Rev. 2.0
page 1
2007-05-22
IPD30N03S4L-14
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area3) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=10 µA V DS=30 V, V GS=0 V, T j=25 °C V DS=30 V, V GS=0 V, T j=125 °C2) V DS=18 V, V GS=0 V, T j=85 °C2) Gate-source le...
