IPD30N06S3-24
OptiMOS®-T Power-Transistor
Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A
Features • N-channel -...
IPD30N06S3-24
OptiMOS®-T Power-
Transistor
Product Summary V DS R DS(on),max ID 55 24 30 V mΩ A
Features N-channel - Normal Level - Enhancement mode Automotive AEC Q101 qualified MSL1 up to 260°C peak reflow 175°C operating temperature Green package (RoHS compliant) 100% Avalanche tested PG-TO252-3-11
Type IPD30N06S3-24
Package PG-TO252-3-11
Marking 3N0624
Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol ID Conditions T C=25 °C, V GS=10 V T C=100 °C, V GS=10 V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 I D,pulse E AS I AS V GS P tot T j, T stg T C=25 °C T C=25 °C I D=15 A Value 30 23 120 100 30 ±20 45 -55 ... +175 55/175/56 mJ A V W °C Unit A
Rev. 1.1
page 1
2007-11-07
IPD30N06S3-24
Parameter
Symbol
Conditions min.
Values typ. max.
Unit
Thermal characteristics2) Thermal resistance, junction - case SMD version, device on PCB R thJC R thJA minimal footprint 6 cm2 cooling area4) Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current V (BR)DSS V GS=0 V, I D= 1 mA V GS(th) I DSS V DS=V GS, I D=20 µA V DS=55 V, V GS=0 V, T j=25 °C V DS=55 V, V GS=0 V, T j=125 °C2) Gate-source leakage current Drain-source on-state resistance I G...
