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IPP35CN10N Dataheets PDF



Part Number IPP35CN10N
Manufacturers Infineon
Logo Infineon
Description Power-Transistor
Datasheet IPP35CN10N DatasheetIPP35CN10N Datasheet (PDF)

IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 .

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IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G OptiMOS™2 Power-Transistor Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) Product Summary VDS RDS(on),max (TO252) ID 100 V 33 mW 27 A • 175 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Ideal for high-frequency switching and synchronous rectification • Halogen-free according to IEC61249-2-21 Type IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Package Marking PG-TO263-3 34CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions PG-TO220-3 35CN10N Value Unit Continuous drain current ID T C=25 °C T C=100 °C Pulsed drain current2) I D,pulse T C=25 °C Avalanche energy, single pulse E AS I D=27 A, R GS=25 W Gate source voltage3) V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V 27 A 20 108 47 mJ ±20 V 58 W -55 ... 175 °C 55/175/56 Rev. 1.091 page 1 2013-07-25 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G Parameter Symbol Conditions min. Values typ. Unit max. Thermal characteristics Thermal resistance, junction - case R thJC - Thermal resistance, junction - R thJA minimal footprint - ambient (TO220, TO262, TO263) 6 cm2 cooling area4) - Thermal resistance, junction ambient (TO251, TO252) minimal footprint - 6 cm2 cooling area4) - - 2.6 K/W - 62 - 40 - 75 - 50 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Drain-source breakdown voltage V (BR)DSS V GS=0 V, I D=1 mA 100 - Gate threshold voltage V GS(th) V DS=V GS, I D=29 µA 2 3 Zero gate voltage drain current I DSS V DS=80 V, V GS=0 V, T j=25 °C - 0.1 -V 4 1 µA V DS=80 V, V GS=0 V, T j=125 °C - Gate-source leakage current I GSS V GS=20 V, V DS=0 V - Drain-source on-state resistance R DS(on) V GS=10 V, I D=27 A, (TO252) - 10 100 1 100 nA 25 33 mW V GS=10 V, I D=27 A, - (TO251) 25 33 V GS=10 V, I D=27 A, - (TO263) 25 34 V GS=10 V, I D=27 A, - (TO220, TO262) 26 35 Gate resistance Transconductance RG - 1 g fs |V DS|>2|I D|R DS(on)max, I D=27 A 15 30 -W -S 4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air. Rev. 1.091 page 2 2013-07-25 Parameter Symbol Conditions IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G min. Values typ. Unit max. Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time C iss - C oss V GS=0 V, V DS=50 V, f =1 MHz - C rss - t d(on) - tr V DD=50 V, V GS=10 V, - t d(off) I D=27 A, R G,ext=1.6 W - tf - 1180 175 13 11 21 17 4 1570 pF 233 20 17 ns 31 25 6 Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge Q gs - 7 9 nC Q gd - Q sw V DD=50 V, I D=27 A, V GS=0 to 10 V - Qg - 4 6 7 11 18 24 V plateau - 5.6 -V Q oss V DD=50 V, V GS=0 V - 18 24 nC Reverse Diode Diode continous forward current Diode pulse current Diode forward voltage Reverse recovery time Reverse recovery charge IS I S,pulse T C=25 °C V SD V GS=0 V, I F=27 A, T j=25 °C t rr V R=50 V, I F=I S, Q rr di F/dt =100 A/µs 5) See figure 16 for gate charge parameter definition - - 27 A - - 108 - 1 1.2 V - 77 ns - 154 - nC Rev. 1.091 page 3 2013-07-25 1 Power dissipation P tot=f(T C) 60 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 2 Drain current I D=f(T C); V GS≥10 V 30 40 20 Ptot [W] ID [A] 20 10 0 0 50 100 150 200 TC [°C] 0 0 50 100 150 200 TC [°C] 3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p 103 4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T 101 ID [A] ZthJC [K/W] 102 1 µs 10 µs 100 µs 101 1 ms DC 10 ms 100 0.5 100 0.2 0.1 10-1 0.05 0.02 0.01 single pulse 10-1 10-1 Rev. 1.091 100 101 102 VDS [V] 10-2 103 10-5 10-4 10-3 10-2 10-1 100 tp [s] page 4 2013-07-25 5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS 150 100 IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G 6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS 80 10 V 4.5 V 5V 5.5 V 8V 60 ID [A] RDS(on) [mW] 7V 40 6V 50 6.5 V 8V 10 V 6V 20 5.5 V 5V 4.5 V 0 0 0 1 2 3 4 5 0 VDS [V] 20 ID [A] 7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j 50 8 Typ. forward transconductance g fs=f(I D); T j=25 °C 50 40 40 .


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