Document
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
OptiMOS™2 Power-Transistor
Features • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on)
Product Summary VDS RDS(on),max (TO252) ID
100 V 33 mW 27 A
• 175 °C operating temperature
• Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application
• Ideal for high-frequency switching and synchronous rectification
• Halogen-free according to IEC61249-2-21
Type
IPB34CN10N G
IPD33CN10N G
IPI35CN10N G
IPP35CN10N G
Package Marking
PG-TO263-3 34CN10N
PG-TO252-3 33CN10N
PG-TO262-3 35CN10N
Maximum ratings, at T j=25 °C, unless otherwise specified
Parameter
Symbol Conditions
PG-TO220-3 35CN10N
Value
Unit
Continuous drain current
ID
T C=25 °C
T C=100 °C
Pulsed drain current2)
I D,pulse T C=25 °C
Avalanche energy, single pulse
E AS
I D=27 A, R GS=25 W
Gate source voltage3)
V GS
Power dissipation
P tot
T C=25 °C
Operating and storage temperature T j, T stg
IEC climatic category; DIN IEC 68-1
1)J-STD20 and JESD22 2) see figure 3 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V
27
A
20
108
47
mJ
±20
V
58
W
-55 ... 175
°C
55/175/56
Rev. 1.091
page 1
2013-07-25
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
Parameter
Symbol Conditions
min.
Values typ.
Unit max.
Thermal characteristics
Thermal resistance, junction - case R thJC
-
Thermal resistance, junction -
R thJA minimal footprint
-
ambient (TO220, TO262, TO263)
6 cm2 cooling area4)
-
Thermal resistance, junction ambient (TO251, TO252)
minimal footprint
-
6 cm2 cooling area4)
-
-
2.6 K/W
-
62
-
40
-
75
-
50
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V (BR)DSS V GS=0 V, I D=1 mA
100
-
Gate threshold voltage
V GS(th) V DS=V GS, I D=29 µA
2
3
Zero gate voltage drain current
I DSS
V DS=80 V, V GS=0 V, T j=25 °C
-
0.1
-V 4
1 µA
V DS=80 V, V GS=0 V, T j=125 °C
-
Gate-source leakage current
I GSS
V GS=20 V, V DS=0 V
-
Drain-source on-state resistance
R DS(on)
V GS=10 V, I D=27 A, (TO252)
-
10
100
1
100 nA
25
33 mW
V GS=10 V, I D=27 A,
-
(TO251)
25
33
V GS=10 V, I D=27 A,
-
(TO263)
25
34
V GS=10 V, I D=27 A,
-
(TO220, TO262)
26
35
Gate resistance Transconductance
RG
-
1
g fs
|V DS|>2|I D|R DS(on)max, I D=27 A
15
30
-W -S
4) Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical in still air.
Rev. 1.091
page 2
2013-07-25
Parameter
Symbol Conditions
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
min.
Values typ.
Unit max.
Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time
C iss
-
C oss
V GS=0 V, V DS=50 V, f =1 MHz
-
C rss
-
t d(on)
-
tr
V DD=50 V, V GS=10 V,
-
t d(off)
I D=27 A, R G,ext=1.6 W
-
tf
-
1180 175 13 11 21 17
4
1570 pF 233 20 17 ns 31 25
6
Gate Charge Characteristics5) Gate to source charge Gate to drain charge Switching charge Gate charge total Gate plateau voltage Output charge
Q gs
-
7
9 nC
Q gd
-
Q sw
V DD=50 V, I D=27 A, V GS=0 to 10 V
-
Qg
-
4
6
7
11
18
24
V plateau
-
5.6
-V
Q oss
V DD=50 V, V GS=0 V
-
18
24 nC
Reverse Diode Diode continous forward current Diode pulse current
Diode forward voltage
Reverse recovery time Reverse recovery charge
IS I S,pulse
T C=25 °C
V SD
V GS=0 V, I F=27 A, T j=25 °C
t rr
V R=50 V, I F=I S,
Q rr
di F/dt =100 A/µs
5) See figure 16 for gate charge parameter definition
-
-
27 A
-
-
108
-
1
1.2 V
-
77
ns
-
154
- nC
Rev. 1.091
page 3
2013-07-25
1 Power dissipation P tot=f(T C)
60
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
2 Drain current I D=f(T C); V GS≥10 V
30
40
20
Ptot [W] ID [A]
20
10
0
0
50
100
150
200
TC [°C]
0
0
50
100
150
200
TC [°C]
3 Safe operating area I D=f(V DS); T C=25 °C; D =0 parameter: t p
103
4 Max. transient thermal impedance Z thJC=f(t p) parameter: D =t p/T
101
ID [A] ZthJC [K/W]
102
1 µs
10 µs
100 µs
101
1 ms
DC
10 ms
100
0.5
100
0.2
0.1
10-1
0.05 0.02
0.01 single pulse
10-1 10-1
Rev. 1.091
100
101
102
VDS [V]
10-2
103
10-5
10-4
10-3
10-2
10-1
100
tp [s]
page 4
2013-07-25
5 Typ. output characteristics I D=f(V DS); T j=25 °C parameter: V GS
150
100
IPB34CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G
6 Typ. drain-source on resistance R DS(on)=f(I D); T j=25 °C parameter: V GS
80
10 V
4.5 V
5V
5.5 V
8V
60
ID [A] RDS(on) [mW]
7V
40
6V
50
6.5 V
8V
10 V
6V
20
5.5 V
5V
4.5 V
0
0
0
1
2
3
4
5
0
VDS [V]
20 ID [A]
7 Typ. transfer characteristics I D=f(V GS); |V DS|>2|I D|R DS(on)max parameter: T j
50
8 Typ. forward transconductance g fs=f(I D); T j=25 °C
50
40
40
.