IPI35CN10NG

IPB35CN10N G IPI35CN10N G IPP35CN10N G IPD33CN10N G IPU33CN10N G OptiMOS®2 Power-Transistor Features N-channel, normal level Excellent gate charge x R DS(on) product (FOM) Very low on-resistance R DS(on) 175 °C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target application Product Summary V DS R DS(on),max (TO252) ID 100 34 27 V mΩ A Ideal for high-frequency switching and synchronous rectification Type IPB35CN10N G IPD33CN10N G IPI35CN10N G IPP35CN10N G IPU33CN10N G Package Marking PG-TO263-3 35CN10N PG-TO252-3 33CN10N PG-TO262-3 35CN10N PG-TO220-3 35CN10N PG-TO251-3 33CN10N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current Symbol Conditions ID T C=25 °C T C=100 °C Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt Gate source voltage3) Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 1) Value 27 20 108 47 6 ±20 Unit A I D,pulse E AS dv /dt V GS P tot T j, T stg T C=25 °C I D=27 A, R GS=25 Ω I D=27 A, V DS=80 V, di /dt =100 A/µs, T j,max=175 °C mJ kV/µs V W °C T C=25 °C 58 -55 ... 175 55/175/56 J-STD20 and JESD22 see figure 3 2) 3) Tjmax=150°C and duty cycle D=0.01 for Vgs<-5V page 1 2006-06-02 Rev.1.02 IPB35CN10N G IPI35CN10N G Parameter Symbol Conditions min. Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction ambient (TO220, TO262, TO263) Thermal...