TPCL4203

TPCL4203 MOSFETs Silicon N-Channel MOS (U-MOS) TPCL4203 1. Applications Dedicated to Single-Cell Lithium-Ion Secondary Battery Applications The product(s) described herein should not be used for any other application. Note: 2. Features (1) (2) (3) (4) (5) Small, thin package Low source-source on-resistance: RSS(ON) = 27 mΩ (typ.) (VGS = 4.5 V) Low leakage current: ISSS = 10 µA (max) (VSS = 24 V) Enhancement mode: Vth = 0.5 to 1.2 V (VSS = 10 V, IS = 200 µA) Common drain 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Gate 2 4: Source 2 ChipLGA 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Source-source voltage Gate-source voltage Source current (DC) Source current (pulsed) Power dissipation Power dissipation Channel temperature Storage temperature (t = 10 s) (t = 10 s) (Note 1) (Note 1) (Note 2), (Note 4) (Note 3), (Note 4) Symbol VSSS VGSS IS ISP PD PD Tch Tstg Rating 24 ±12 6 24 0.50 1.65 150 -55 to 150 W W  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods"...