DatasheetsPDF.com

TPCP8105 Dataheets PDF



Part Number TPCP8105
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description MOSFETs
Datasheet TPCP8105 DatasheetTPCP8105 Datasheet (PDF)

TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8105 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Rat.

  TPCP8105   TPCP8105


Document
TPCP8105 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8105 1. Applications • • • Lithium-Ion Secondary Batteries Power Management Switches Notebook PCs 2. Features (1) (2) (3) (4) Small, thin package Low drain-source on-resistance: RDS(ON) = 13.8 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain PS-8 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 5 s) (t = 5 s) (Note 1) (Note 1) (Note 2) (Note 3) (Note 4) Symbol VDSS VGSS ID IDP PD PD EAS IAR Tch Tstg Rating -20 ±12 -7.2 -28.8 1.68 0.84 33.0 -7.2 150 -55 to 150 W W mJ A  A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 1 2012-09-26 Rev.2.0 TPCP8105 5. Thermal Characteristics Characteristics Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (t = 5 s) (t = 5 s) (Note 2) (Note 3) Symbol Rth(ch-a) Rth(ch-a) Max 74.4 148.8 Unit /W /W Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -16 V, Tch = 25 (initial), L = 0.5 mH, RG = 25 Ω, IAR = -7.2 A Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2012-09-26 Rev.2.0 TPCP8105 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 5) Symbol IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) Test Condition VGS = ±12 V, VDS = 0 V VDS = -20 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 8 V VDS = -10 V, ID = -1 mA VGS = -1.8 V, ID = -1.8 A VGS = -2.0 V, ID = -1.8 A VGS = -2.5 V, ID = -3.6 A VGS = -4.5 V, ID = -3.6 A Min   -20 -12 -0.5     Typ.      28 25 17.9 13.8 Max ±0.1 -10   -1.2 60 45 23 17 mΩ V Unit µA Note 5: If a forward bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Ciss Crss Coss tr ton tf toff See Figure 6.2.1. Test Condition VDS = -10 V, VGS = 0 V, f = 1 MHz Min        Typ. 2280 296 340 7.2 15 71 241 Max        ns Unit pF Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Qg Qgs1 Qgd Test Condition VDD ≈ -16 V, VGS = -5 V, ID = -7.2A Min    Typ. 28 5 7 Max    Unit nC 6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Reverse drain current (pulsed) Diode forward voltage (Note 6) Symbol IDRP VDSF  IDR = -7.2 A, VGS = 0 V Test Condition Min   Typ.   Max -28.8 1.2 Unit A V Note 6: Ensure that the channel temperature does not exceed 150. 3 2012-09-26 Rev.2.0 TPCP8105 7. Marking Fig. 7.1 Marking 4 2012-09-26 Rev.2.0 TPCP8105 8. Characteristics Curves (Note) Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2012-09-26 Rev.2.0 TPCP8105 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta Fig. 8.10 Dynamic Input/Output Characteristics Fig. 8.11 PD - Ta (Guaranteed Maximum) 6 2012-09-26 Rev.2.0 TPCP8105 Fig. 8.12 rth - tw (Guaranteed Maximum) Fig. 8.13 Safe Operating Area (Guaranteed Maximum) Note: The above characteristics curves are presented for reference only and not guaranteed by production test, unless otherwise noted. 7 2012-09-26 Rev.2.0 TPCP8105 Package Dimensions Unit: mm W.


TPCP8110 TPCP8105 TPCP8106


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)