TPCP8109

MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8109 1. Applications Motor Drivers Mobile Equipment 2. Features (1) AEC-Q101 qualifed (2) Small, thin package (3) Small gate charge: QSW = 5.8 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 40.3 mΩ (typ.) (VGS = -10 V) (5) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8109 PS-8 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.3.0 TPCP8109 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -40 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -4.5 A Drain current (pulsed) (Note 1) IDP -18 Power dissipation (t = 5 s) (Note 2) PD 1.96 W Power dissipation (t = 5 s) (Note 3) PD 0.94 Single-pulse avalanche energy (Note 4) EAS 46.2 mJ Avalanche current IAR -4.5 A Channel temperature (Note 5) Tch 175  Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please...