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TPCP8013 Dataheets PDF



Part Number TPCP8013
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TPCP8013 DatasheetTPCP8013 Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS) TPCP8013 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8013 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba.

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MOSFETs Silicon N-channel MOS (U-MOS) TPCP8013 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TPCP8013 PS-8 1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2012-10 2016-02-23 Rev.5.0 TPCP8013 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 60 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 4 A Drain current (pulsed) (Note 1) IDP 16 Power dissipation (t = 5 s) (Note 2) PD 1.96 W Power dissipation (t = 5 s) (Note 3) PD 0.94 W Single-pulse avalanche energy (Note 4) EAS 29.2 mJ Avalanche current IAR 4 A Channel temperature (Note 5) Tch 175  Storage temperature (Note 5) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (t = 5 s) (Note 2) Rth(ch-a) 76.5 /W Channel-to-ambient thermal resistance (t = 5 s) (Note 3) Rth(ch-a) 159.5 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 25 V, Tch = 25 (initial), L = 2.48 mH, RG = 1 Ω, IAR = 4 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016 Toshiba Corporation 2 2016-02-23 Rev.5.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Symbol Test Condition Min IGSS VGS = ±16 V, VDS = 0 V  IDSS VDS = 60 V, VGS = 0 V  V(BR)DSS ID = 10 mA, VGS = 0 V 60 V(BR)DSX ID = 10 mA, VGS = -20 V 40 Vth VDS = 10 V, ID = 1 mA 2 RDS(ON) VGS = 6 V, ID = 2 A  VGS = 10 V, ID = 2 A  6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Min Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  Crss  Coss  tr See Figure 6.2.1  ton  tf  toff  TPCP8013 Typ. Max Unit  ±10 µA  10   V   2.5 3 48.7 77.9 mΩ 41.5 51.8 Typ. Max Unit 515  pF 48  86  4.9  ns 11.5  4.3  18.5  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge Symbol Test Condition Qg VDD ≈ 48 V, VGS = 10 V, ID = 4 A Qgs1 Qgd QSW Min Typ. Max Unit  12  nC  1.9   4.0   4.5  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 6) IDRP  Diode forward voltage VDSF IDR = 4 A, VGS = 0 V Note 6: Ensure that the channel temperature does not exceed 175. Min Typ. Max Unit   16 A   -1.2 V ©2016 Toshiba Corporation 3 2016-02-23 Rev.5.0 7. Marking TPCP8013 Fig. 7.1 Marking ©2016 Toshiba Corporation 4 2016-02-23 Rev.5.0 8. Characteristics Curves (Note) TPCP8013 Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta (Note 7) ©2016 Toshiba Corporation 5 2016-02-23 Rev.5.0 TPCP8013 Fig. 8.7 IDR - VDS Fig. 8.8 Capacitance - VDS Fig. 8.9 Vth - Ta (Note 7) Fig. 8.10 Dynamic Input/Output Characte.


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