Document
MOSFETs Silicon N-channel MOS (U-MOS)
TPCP8013
1. Applications
• Motor Drivers • Mobile Equipment
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Small gate charge : QSW = 4.5 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 41.5 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) (6) Enhancement mode: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TPCP8013
PS-8
1,2, 3: Source 4: Gate 5, 6, 7, 8: Drain
©2016 Toshiba Corporation
1
Start of commercial production
2012-10
2016-02-23 Rev.5.0
TPCP8013
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
60
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
4
A
Drain current (pulsed)
(Note 1)
IDP
16
Power dissipation
(t = 5 s)
(Note 2)
PD
1.96
W
Power dissipation
(t = 5 s)
(Note 3)
PD
0.94
W
Single-pulse avalanche energy
(Note 4)
EAS
29.2
mJ
Avalanche current
IAR
4
A
Channel temperature
(Note 5)
Tch
175
Storage temperature
(Note 5)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 2)
Rth(ch-a)
76.5
/W
Channel-to-ambient thermal resistance
(t = 5 s)
(Note 3)
Rth(ch-a)
159.5 /W
Note 1: Ensure that the channel temperature does not exceed 175. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = 25 V, Tch = 25 (initial), L = 2.48 mH, RG = 1 Ω, IAR = 4 A Note 5: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
2
2016-02-23 Rev.5.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Symbol
Test Condition
Min
IGSS
VGS = ±16 V, VDS = 0 V
IDSS
VDS = 60 V, VGS = 0 V
V(BR)DSS ID = 10 mA, VGS = 0 V
60
V(BR)DSX ID = 10 mA, VGS = -20 V
40
Vth
VDS = 10 V, ID = 1 mA
2
RDS(ON) VGS = 6 V, ID = 2 A
VGS = 10 V, ID = 2 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1
ton
tf
toff
TPCP8013
Typ. Max Unit
±10
µA
10
V
2.5
3
48.7 77.9 mΩ 41.5 51.8
Typ. Max Unit
515
pF
48
86
4.9
ns
11.5
4.3
18.5
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Gate switch charge
Symbol
Test Condition
Qg
VDD ≈ 48 V, VGS = 10 V, ID = 4 A
Qgs1 Qgd QSW
Min Typ. Max Unit
12
nC
1.9
4.0
4.5
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed) (Note 6)
IDRP
Diode forward voltage
VDSF IDR = 4 A, VGS = 0 V
Note 6: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
16
A
-1.2
V
©2016 Toshiba Corporation
3
2016-02-23 Rev.5.0
7. Marking
TPCP8013
Fig. 7.1 Marking
©2016 Toshiba Corporation
4
2016-02-23 Rev.5.0
8. Characteristics Curves (Note)
TPCP8013
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta (Note 7)
©2016 Toshiba Corporation
5
2016-02-23 Rev.5.0
TPCP8013
Fig. 8.7 IDR - VDS
Fig. 8.8 Capacitance - VDS
Fig. 8.9 Vth - Ta (Note 7)
Fig. 8.10 Dynamic Input/Output Characte.