TPCP8303
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSV)
TPCP8303
Lithium Ion Battery Applications ...
TPCP8303
TOSHIBA Field Effect
Transistor Silicon P Channel MOS Type (U-MOSV)
TPCP8303
Lithium Ion Battery Applications Notebook PC Applications Portable Equipment Applications
Low drain-source ON-resistance: RDS(ON) = 41 mΩ (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = −10 μA (max) (VDS = −20 V) Enhancement mode: Vth = −0.3 to −1.0 V (VDS = −10 V, ID = −1 mA) Unit: mm
0.33±0.05 0.05 M A
8 5
2.4±0.1 0.475
1 4
0.65 2.9±0.1
B A
0.05 M B
(Q1, Q2 Common)
Drain-source voltage
Absolute Maximum Ratings (Ta = 25°C)
S
0.8±0.05 0.025
S
0.17±0.02
0.28 +0.1 -0.11
+0.13
Characteristic Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1)
Symbol VDSS VDGR VGSS ID IDP PD (1) PD (2) PD (1) PD (2) EAS IAR EAR Tch Tstg
Rating −20 −20 ±8 −3.8 −15.2 1.48 1.23
Unit V V V A 1. Source1 2. Gate1 3. Source2 4. Gate2 5. Drain2 6. Drain2 7. Drain1 8. Drain1
1.12 -0.12 1.12 +0.13 -0.12 0.28 +0.1 -0.11
Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2a) Single-device value at dual operation (Note 3b) Single-device operation Drain power (Note 3a) dissipation (t = 5 s) (Note 2b) Single-device value at dual operation (Note 3b) Single-pulse avalanche energy Avalanche current Repetitive avalanche energy Single-device value at dual operation (Note 2a, 3b, 5) Channel temperature Storage temperature range (Note 4)
JEDEC
W
⎯ ⎯ 2-3V1G
0.58 0.36 18.8 −3.8 0.04 150 −55 to 150 mJ A mJ...
