TPCP8306

TPCP8306 MOSFETs Silicon P-Channel MOS (U-MOS) TPCP8306 1. Applications Notebook PCs Mobile Handsets 2. Features (1) (2) (3) (4) Small footprint due to a small and thin package Low drain-source on-resistance: RDS(ON) = 47 mΩ (typ.) (VGS = -4.5 V) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -0.2 mA) 3. Packaging and Internal Circuit 1: Source1 2: Gate1 3: Source2 4: Gate2 5, 6: Drain2 7, 8: Drain1 PS-8 1 2010-08-03 Rev.1.0 TPCP8306 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation (single operation) Power dissipation (per device for dual operation) Power dissipation (single operation) Power dissipation (per device for dual operation) Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature (t = 5 s) (t = 5 s) (t = 5 s) (t = 5 s) (Note 1) (Note 1) (Note 2), (Note 4) (Note 2), (Note 5) (Note 3), (Note 4) (Note 3), (Note 5) (Note 6) Symbol VDSS VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR Tch Tstg Rating -20 ±12 -4 -16 1.48 1.23 0.58 0.36 10.4 -4 150 -55 to 150 mJ A  W A Unit V Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e....