Document
MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS )
TPCP8407
1. Applications
• Motor Drivers • Mobile Equipment
2. Features
(1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge
N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-channel MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA)
3. Packaging and Internal Circuit
TPCP8407
PS-8
1: Source (N-channel) 2: Gate (N-channel) 3: Source (P-channel) 4: Gate (P-channel) 5, 6: Drain (P-channel) 7, 8: Drain (N-channel)
©2016 Toshiba Corporation
1
Start of commercial production
2013-05
2016-02-24 Rev.4.0
TPCP8407
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) 4.1. N-Channel MOSFET
Characteristics
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation (single operation) Power dissipation (per device for dual operation) Power dissipation (single operation) Power dissipation (per device for dual operation) Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
4.2. P-Channel MOSFET
(t = 5 s) (t = 5 s) (t = 5 s) (t = 5 s)
Symbol
Rating
Unit
(Note 1) (Note 1) (Note 2), (Note 4) (Note 2), (Note 5) (Note 3), (Note 4) (Note 3), (Note 5) (Note 6)
(Note 7) (Note 7)
VDSS VGSS
ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR Tch Tstg
40
V
±20
5
A
20
1.77
W
1.47
0.69
0.43
33.2
mJ
5
A
175
-55 to 175
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-40
V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-4
A
Drain current (pulsed)
(Note 1)
IDP
-16
Power dissipation (single operation)
(t = 5 s)
(Note 2), (Note 4) PD(1)
1.77
W
Power dissipation (per device for dual operation)
(t = 5 s)
(Note 2), (Note 5) PD(2)
1.47
Power dissipation (single operation)
(t = 5 s)
(Note 3), (Note 4) PD(1)
0.69
Power dissipation (per device for dual operation)
(t = 5 s)
(Note 3), (Note 5) PD(2)
0.43
Single-pulse avalanche energy
(Note 6)
EAS
46.2
mJ
Avalanche current
IAR
-4
A
Channel temperature
(Note 7)
Tch
175
Storage temperature
(Note 7)
Tstg
-55 to 175
Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
©2016 Toshiba Corporation
2
2016-02-24 Rev.4.0
5. Thermal Characteristics
TPCP8407
Characteristics
Symbol Max Unit
Channel-to-ambient thermal resistance (single operation)
Channel-to-ambient thermal resistance (per device for dual operation)
(t = 5 s) (t = 5 s)
(Note 2), (Note 4) Rth(ch-a)(1) (Note 2), (Note 5) Rth(ch-a)(2)
84.7 102
/W
Channel-to-ambient thermal resistance (single operation)
Channel-to-ambient thermal resistance (per device for dual operation)
(t = 5 s) (t = 5 s)
(Note 3), (Note 4) Rth(ch-a)(1) (Note 3), (Note 5) Rth(ch-a)(2)
217.3 348.8
Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.) Note 6: N channel: VDD = 25 V, Tch = 25 (initial), L = 1.379 mH, RG = 1 Ω, IAR = 5 A
P channel: VDD = -25 V, Tch = 25 (initial), L = 2.999 mH, RG = 25 Ω, IAR = -4 A Note 7: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2016 Toshiba Corporation
3
2016-02-24 Rev.4.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) 6.1.1. N-Channel MOSFET
TPCP8407
Characteristics
Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source .