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TPCP8407 Dataheets PDF



Part Number TPCP8407
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon Dual-Channel MOSFET
Datasheet TPCP8407 DatasheetTPCP8407 Datasheet (PDF)

MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOS.

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MOSFETs Silicon P-/N-Channel MOS (U-MOS /U-MOS ) TPCP8407 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) AEC-Q101 qualified (2) Small, thin package (3) Low gate charge N-channel MOSFET: QSW = 4.7 nC (typ.) P-channel MOSFET: QSW = 5.5 nC (typ.) (4) Low drain-source on-resistance N-channel MOSFET: RDS(ON) = 29.1 mΩ (typ.) (VGS = 10 V) P-channel MOSFET: RDS(ON) = 43.7 mΩ (typ.) (VGS = -10V) (5) Low leakage current N-channel MOSFET: IDSS = 10 µA (max) (VDS = 40 V) P-channel MOSFET: IDSS = -10 µA (max) (VDS = -40 V) (6) Enhancement mode N-channel MOSFET: Vth = 2 to 3 V (VDS = 10 V, ID = 1 mA) P-channel MOSFET: Vth = -2 to -3 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCP8407 PS-8 1: Source (N-channel) 2: Gate (N-channel) 3: Source (P-channel) 4: Gate (P-channel) 5, 6: Drain (P-channel) 7, 8: Drain (N-channel) ©2016 Toshiba Corporation 1 Start of commercial production 2013-05 2016-02-24 Rev.4.0 TPCP8407 4. Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) 4.1. N-Channel MOSFET Characteristics Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation (single operation) Power dissipation (per device for dual operation) Power dissipation (single operation) Power dissipation (per device for dual operation) Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature 4.2. P-Channel MOSFET (t = 5 s) (t = 5 s) (t = 5 s) (t = 5 s) Symbol Rating Unit (Note 1) (Note 1) (Note 2), (Note 4) (Note 2), (Note 5) (Note 3), (Note 4) (Note 3), (Note 5) (Note 6) (Note 7) (Note 7) VDSS VGSS ID IDP PD(1) PD(2) PD(1) PD(2) EAS IAR Tch Tstg 40 V ±20 5 A 20 1.77 W 1.47 0.69 0.43 33.2 mJ 5 A 175  -55 to 175 Characteristics Symbol Rating Unit Drain-source voltage VDSS -40 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -4 A Drain current (pulsed) (Note 1) IDP -16 Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) PD(1) 1.77 W Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) PD(2) 1.47 Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) PD(1) 0.69 Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) PD(2) 0.43 Single-pulse avalanche energy (Note 6) EAS 46.2 mJ Avalanche current IAR -4 A Channel temperature (Note 7) Tch 175  Storage temperature (Note 7) Tstg -55 to 175 Note : Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ©2016 Toshiba Corporation 2 2016-02-24 Rev.4.0 5. Thermal Characteristics TPCP8407 Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single operation) Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) (Note 2), (Note 5) Rth(ch-a)(2) 84.7 102 /W Channel-to-ambient thermal resistance (single operation) Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) (Note 3), (Note 5) Rth(ch-a)(2) 217.3 348.8 Note 1: Ensure that the channel temperature does not exceed 175 . Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power is evenly supplied to both devices.) Note 6: N channel: VDD = 25 V, Tch = 25  (initial), L = 1.379 mH, RG = 1 Ω, IAR = 5 A P channel: VDD = -25 V, Tch = 25  (initial), L = 2.999 mH, RG = 25 Ω, IAR = -4 A Note 7: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2016 Toshiba Corporation 3 2016-02-24 Rev.4.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25  unless otherwise specified) 6.1.1. N-Channel MOSFET TPCP8407 Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source .


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