TPCP8406

TPCP8406 MOSFETs Silicon P-/N-Channel MOS (U-MOS/U-MOS-H) TPCP8406 1. Applications Cell Phones Motor Drivers 2. Features (1) Low drain-source on-resistance P-channel RDS(ON) = 33 mΩ (typ.) (VGS = -10 V), N-channel RDS(ON) = 24 mΩ (typ.) (VGS = 10 V) (2) Low leakage current P-channel IDSS = -10 µA (VDS = -40 V), N-channel IDSS = 10 µA (VDS = 40 V) (3) Enhancement mode P-channel Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.1 mA), N-channel Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 PS-8 1 2011-03-14 Rev.2.0 TPCP8406 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Drain-source voltage P/N P-ch N-ch Drain-gate voltage (RGS = 20 kΩ) P-ch N-ch Gate-source voltage P-ch N-ch Drain current (DC) (Note 1) P-ch N-ch Drain current (pulsed) (Note 1) P-ch N-ch Power dissipation (single operation) Power dissipation (per device for dual operation) Power dissipation (single operation) Power dissipation (per device for dual operation) Single-pulse avalanche energy (t = 5 s) (t = 5 s) (t = 5 s) (t = 5 s) (Note 2), (Note 4) (Note 2), (Note 5) (Note 3), (Note 4) (Note 3), (Note 5) (Note 6) P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch P-ch N-ch Avalanche current P-ch N-ch Channel temperature P-ch N-ch Storage temperature P-ch N-ch Tstg Tch IAR EAS PD(2) PD(1) PD(2) PD(1) IDP ID VGSS VDGR Symbol VDSS Rating -40 40 -40 40 ±20 ±20 -5 6 -20 24 1.48 ...