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TPCP8205-H Dataheets PDF



Part Number TPCP8205-H
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TPCP8205-H DatasheetTPCP8205-H Datasheet (PDF)

MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCP8205-H 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.)(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8205-H PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7,.

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MOSFETs Silicon N-Channel MOS (U-MOS-H) TPCP8205-H 1. Applications • Motor Drivers • Mobile Equipment 2. Features (1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.)(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA) 3. Packaging and Internal Circuit TPCP8205-H PS-8 1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1 ©2015 Toshiba Corporation 1 Start of commercial production 2010-03 2015-10-21 Rev.5.0 TPCP8205-H 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 30 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 6.5 A Drain current (pulsed) (Note 1) IDP 26 Power dissipation (single operation) (t = 5 s) (Note 2), (Note 4) PD(1) 1.48 W Power dissipation (per device for dual operation) (t = 5 s) (Note 2), (Note 5) PD(2) 1.23 Power dissipation (single operation) (t = 5 s) (Note 3), (Note 4) PD(1) 0.58 Power dissipation (per device for dual operation) (t = 5 s) (Note 3), (Note 5) PD(2) 0.36 Single-pulse avalanche energy (Note 6) EAS 10.9 mJ Avalanche current IAR 6.5 A Repetitive avalanche energy (Note 2), (Note 7) EAR 0.032 mJ Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-ambient thermal resistance (single operation) (t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84.5 /W Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (Note 2), (Note 5) Rth(ch-a)(2) 101.6 Channel-to-ambient thermal resistance (single operation) (t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) 215.5 Channel-to-ambient thermal resistance (per device for dual operation) (t = 5 s) (Note 3), (Note 5) Rth(ch-a)(2) 347.2 Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power is evenly supplied to both devices.) Note 6: VDD = 24 V, Tch = 25 (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6.5 A Note 7: Repetitive rating; pulse width limited by maximum channel temperature. Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2015 Toshiba Corporation 2 2015-10-21 Rev.5.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance Forward transfer admittance Symbol Test Condition Min IGSS VGS = ±20 V, VDS = 0 V  IDSS VDS = 30 V, VGS = 0 V  V(BR)DSS ID = 10 mA, VGS = 0 V 30 V(BR)DSX ID = 10 mA, VGS = -20 V 15 Vth VDS = 10 V, ID = 0.1 mA 1.3 RDS(ON) VGS = 4.5 V, ID = 3.3 A  VGS = 10 V, ID = 3.3 A  |Yfs| VDS = 10 V, ID = 3.3 A 7.5 6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Min Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  Crss  Coss  tr See Figure 6.2.1.  ton  tf  toff  TPCP8205-H Typ. Max Unit  ±0.1 µA  10   V    2.3 22 29 mΩ 20 26 15  S Typ. Max Unit 830  pF 53  177  4.1  ns 10.8  11  31  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Co.


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