Document
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCP8205-H
1. Applications
• Motor Drivers • Mobile Equipment
2. Features
(1) Small footprint due to a small and thin package (2) High-speed switching (3) Low drain-source on-resistance: RDS(ON) = 20 mΩ (typ.)(VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (5) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 0.1 mA)
3. Packaging and Internal Circuit
TPCP8205-H
PS-8
1: Source 1 2: Gate 1 3: Source 2 4: Gate 2 5, 6: Drain 2 7, 8: Drain 1
©2015 Toshiba Corporation
1
Start of commercial production
2010-03
2015-10-21 Rev.5.0
TPCP8205-H
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
30
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
6.5
A
Drain current (pulsed)
(Note 1)
IDP
26
Power dissipation (single operation)
(t = 5 s)
(Note 2), (Note 4) PD(1)
1.48
W
Power dissipation (per device for dual operation)
(t = 5 s)
(Note 2), (Note 5) PD(2)
1.23
Power dissipation (single operation)
(t = 5 s)
(Note 3), (Note 4) PD(1)
0.58
Power dissipation (per device for dual operation)
(t = 5 s)
(Note 3), (Note 5) PD(2)
0.36
Single-pulse avalanche energy
(Note 6)
EAS
10.9
mJ
Avalanche current
IAR
6.5
A
Repetitive avalanche energy
(Note 2), (Note 7) EAR
0.032
mJ
Channel temperature
Tch
150
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol Max Unit
Channel-to-ambient thermal resistance (single operation)
(t = 5 s) (Note 2), (Note 4) Rth(ch-a)(1) 84.5 /W
Channel-to-ambient thermal resistance (per device for dual operation)
(t = 5 s) (Note 2), (Note 5) Rth(ch-a)(2) 101.6
Channel-to-ambient thermal resistance (single operation)
(t = 5 s) (Note 3), (Note 4) Rth(ch-a)(1) 215.5
Channel-to-ambient thermal resistance (per device for dual operation)
(t = 5 s) (Note 3), (Note 5) Rth(ch-a)(2) 347.2
Note 1: Ensure that the channel temperature does not exceed 150. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.) Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.) Note 6: VDD = 24 V, Tch = 25 (initial), L = 0.2 mH, RG = 25 Ω, IAR = 6.5 A Note 7: Repetitive rating; pulse width limited by maximum channel temperature.
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2015 Toshiba Corporation
2
2015-10-21 Rev.5.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
Forward transfer admittance
Symbol
Test Condition
Min
IGSS
VGS = ±20 V, VDS = 0 V
IDSS
VDS = 30 V, VGS = 0 V
V(BR)DSS ID = 10 mA, VGS = 0 V
30
V(BR)DSX ID = 10 mA, VGS = -20 V
15
Vth
VDS = 10 V, ID = 0.1 mA
1.3
RDS(ON) VGS = 4.5 V, ID = 3.3 A
VGS = 10 V, ID = 3.3 A
|Yfs| VDS = 10 V, ID = 3.3 A
7.5
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1.
ton
tf
toff
TPCP8205-H
Typ. Max Unit
±0.1
µA
10
V
2.3
22
29
mΩ
20
26
15
S
Typ. Max Unit
830
pF
53
177
4.1
ns
10.8
11
31
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol
Test Co.