Document
DMP3008SFG
30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI®
Product Summary ADVANCE INFORMATION
V(BR)DSS RDS(ON) max 17mΩ @ VGS = -10V -30V 25mΩ @ VGS = -4.5V -7.1A ID max TA = 25°C -8.6A
Features and Benefits
• • • • • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability
Description and Applications
This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Backlighting Power Management Functions DC-DC Converters
Mechanical Data
• • • • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate)
Drain
POWERDI3333-8
S S
Pin 1 S G
Gate
D D D D
Source
Top View
Bottom View
Internal Schematic
Ordering Information (Note 4)
Part Number DMP3008SFG-7 DMP3008SFG-13
Notes:
Case POWERDI3333-8 POWERDI3333-8
Packaging 2000/Tape & Reel 3000/Tape & Reel
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free. 3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com.
Marking Information
YYWW
S31
S31 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53)
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
1 of 7 www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
Maximum Ratings @TA = 25°C unless otherwise specified ADVANCE INFORMATION
Characteristic Drain-Source Voltage Gate-Source Voltage Steady State t<10s Steady State t<10s Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDSS VGSS ID ID ID ID IDM IS Value -30 ±20 -8.6 -7.0 -11.7 -9.3 -7.1 -5.6 -9.6 -7.6 -80 -3.0 Units V V A A A A A A
Continuous Drain Current (Note 6) VGS = -10V
Continuous Drain Current (Note 6) VGS = -4.5V
Thermal Characteristics @TA = 25°C unless otherwise specified
Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range
Notes:
Symbol PD Steady state t<10s Steady state t<10s RθJA PD RθJA RθJC TJ, TSTG
Value 0.9 140 72 2.2 57 30 7.1 -55 to +150
Units W °C/W °C/W W °C/W °C/W °C/W °C
5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate.
100
RDS(on) Limited PW = 10µs
100 P(PK), PEAK TRANSIENT POIWER (W) 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation
Single Pulse RθJA = 57°C/W RθJA(t) = r(t) * RθJA T J - T A = P * RθJA(t)
-ID, DRAIN CURRENT (A)
10
DC
1
PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms
0.1
TJ(max) = 150°C TA = 25°C Single Pulse
PW = 100µs
0.01 0.1
1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area
100
POWERDI is a registered trademark of Diodes Incorporated
DMP3008SFG
Document number: DS35598 Rev. 5 - 2
2 of 7 www.diodes.com
May 2012
© Diodes Incorporated
DMP3008SFG
1 r(t), TRANSIENT THERMAL RESISTANCE
D = 0.7 D = 0.5 D = 0.3
ADVANCE INFORMATION
0.1
D = 0.1 D = 0.05
D = 0.9
D = 0.02
0.01
D = 0.01 D = 0.005 R θJA(t) = r(t) * R θJA R θJA = 57°C/W Duty Cycle, D = t1/ t2
Single Pulse
0.001 0.00001
0.0001
0.001
0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance
10
100
1,000
Electrical Characteristics TA = 25°C unless otherwise specified
Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capaci.