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DMP3008SFG Dataheets PDF



Part Number DMP3008SFG
Manufacturers Diodes Incorporated
Logo Diodes Incorporated
Description 30V P-Channel MOSFET
Datasheet DMP3008SFG DatasheetDMP3008SFG Datasheet (PDF)

DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 17mΩ @ VGS = -10V -30V 25mΩ @ VGS = -4.5V -7.1A ID max TA = 25°C -8.6A Features and Benefits • • • • • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen.

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DMP3008SFG 30V P-CHANNEL ENHANCEMENT MODE MOSFET POWERDI® Product Summary ADVANCE INFORMATION V(BR)DSS RDS(ON) max 17mΩ @ VGS = -10V -30V 25mΩ @ VGS = -4.5V -7.1A ID max TA = 25°C -8.6A Features and Benefits • • • • • • Low RDS(ON) – ensures on state losses are minimized Small form factor thermally efficient package enables higher density end products Occupies just 33% of the board area occupied by SO-8 enabling smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. “Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications This MOSFET has been designed to minimize the on-state resistance (RDS(on)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. • • • Backlighting Power Management Functions DC-DC Converters Mechanical Data • • • • • • Case: POWERDI3333-8 Case Material: Molded Plastic, "Green" Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.008 grams (approximate) Drain POWERDI3333-8 S S Pin 1 S G Gate D D D D Source Top View Bottom View Internal Schematic Ordering Information (Note 4) Part Number DMP3008SFG-7 DMP3008SFG-13 Notes: Case POWERDI3333-8 POWERDI3333-8 Packaging 2000/Tape & Reel 3000/Tape & Reel 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.  3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and <1000ppm antimony compounds. 4. For packaging details, go to our website at http://www.diodes.com. Marking Information YYWW S31 S31 = Product Type Marking Code YYWW = Date Code Marking YY = Last digit of year (ex: 11 = 2011) WW = Week code (01 ~ 53) POWERDI is a registered trademark of Diodes Incorporated DMP3008SFG Document number: DS35598 Rev. 5 - 2 1 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3008SFG Maximum Ratings @TA = 25°C unless otherwise specified ADVANCE INFORMATION Characteristic Drain-Source Voltage Gate-Source Voltage Steady State t<10s Steady State t<10s Pulsed Drain Current (10μs pulse, duty cycle = 1%) Maximum Continuous Body Diode Forward Current (Note 6) TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C TA = 25°C TA = 70°C Symbol VDSS VGSS ID ID ID ID IDM IS Value -30 ±20 -8.6 -7.0 -11.7 -9.3 -7.1 -5.6 -9.6 -7.6 -80 -3.0 Units V V A A A A A A Continuous Drain Current (Note 6) VGS = -10V Continuous Drain Current (Note 6) VGS = -4.5V Thermal Characteristics @TA = 25°C unless otherwise specified Characteristic Total Power Dissipation (Note 5) Thermal Resistance, Junction to Ambient (Note 5) Total Power Dissipation (Note 6) Thermal Resistance, Junction to Ambient (Note 6) Thermal Resistance, Junction to Case (Note 6) Operating and Storage Temperature Range Notes: Symbol PD Steady state t<10s Steady state t<10s RθJA PD RθJA RθJC TJ, TSTG Value 0.9 140 72 2.2 57 30 7.1 -55 to +150 Units W °C/W °C/W W °C/W °C/W °C/W °C 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 100 RDS(on) Limited PW = 10µs 100 P(PK), PEAK TRANSIENT POIWER (W) 90 80 70 60 50 40 30 20 10 0 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, PULSE DURATION TIME (sec) Fig. 2 Single Pulse Maximum Power Dissipation Single Pulse RθJA = 57°C/W RθJA(t) = r(t) * RθJA T J - T A = P * RθJA(t) -ID, DRAIN CURRENT (A) 10 DC 1 PW = 10s PW = 1s PW = 100ms PW = 10ms PW = 1ms 0.1 TJ(max) = 150°C TA = 25°C Single Pulse PW = 100µs 0.01 0.1 1 10 -VDS, DRAIN-SOURCE VOLTAGE (V) Fig. 1 SOA, Safe Operation Area 100 POWERDI is a registered trademark of Diodes Incorporated DMP3008SFG Document number: DS35598 Rev. 5 - 2 2 of 7 www.diodes.com May 2012 © Diodes Incorporated DMP3008SFG 1 r(t), TRANSIENT THERMAL RESISTANCE D = 0.7 D = 0.5 D = 0.3 ADVANCE INFORMATION 0.1 D = 0.1 D = 0.05 D = 0.9 D = 0.02 0.01 D = 0.01 D = 0.005 R θJA(t) = r(t) * R θJA R θJA = 57°C/W Duty Cycle, D = t1/ t2 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 t1, PULSE DURATION TIMES (sec) Fig. 3 Transient Thermal Resistance 10 100 1,000 Electrical Characteristics TA = 25°C unless otherwise specified Characteristic OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage ON CHARACTERISTICS (Note 7) Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transfer Admittance Diode Forward Voltage DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance Output Capaci.


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