FDB016N04AL7

FDB016N04AL7 N-Channel PowerTrench® MOSFET June 2014 FDB016N04AL7 N-Channel PowerTrench® MOSFET 40 V, 306 A, 1.6 mW Features RDS(on) = 1.16 mW (Typ.) @ VGS = 10 V, ID = 80 A Fast Switching Speed Low Gate Charge High Performance Trench Technology for Extremely Low RDS(on) High Power and Current Handling Capability RoHS Compliant Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench® process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. A pplications Synchronous Rectification for ATX / Server / Telecom PSU Battery Protection Circuit Motor drives and Uninterruptible Power Supplies 123 567 4 D2-PAK (TO-263) 1. Gate 2. Source 3. Source 4. Drain 5. Source 6. Source 7. Source D(Pin4, tab) G (Pin1) S(Pin2,3,5,6,7) MOSFET Maximum Ratings TC = 25oC unless otherwise noted. Symbol Parameter FDB016N04AL7 VDSS Drain to Source Voltage 40 VGSS ID Gate to Source Voltage Drain Current - Continuous (TC = 25oC, Silicon Limited) - Continuous (TC = 100oC, Silicon Limited) - Continuous (TC = 25oC, Package Limited) ±20 306* 216* 160 IDM Drain Current - Pulsed (Note 1) 1224 EAS Single Pulsed Avalanche Energy (Note 2) 1350 dv/dt Peak Diode Recovery dv/dt (Note 3) 6.0 PD Power Dissipation (TC = 25oC) - Derate Above 25oC 283 1.89 TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8” from Case for 5...