MAPRST0002

MAPRST0002 Radar Pulsed Power Transistor 50W, 1.2-1.4 GHz, 150µs Pulse, 10% Duty Features NPN silicon microwave power transistors Common base configuration Broadband Class C operation High efficiency inter-digitized geometry Diffused emitter ballasting resistors Gold metallization system Internal input and output impedance matching Hermetic metal/ceramic package RoHS compliant M/A-COM Products Released, 30 May 07 Outline Drawing Absolute Maximum Ratings at 25°C Parameter Collector-Emitter Voltage Emitter-Base Voltage Collector Current (Peak) Power Dissipation @ +25°C Storage Temperature Junction Temperature Symbol VCES VEBO IC PTOT TSTG TJ Rating 70 3.0 3.5 100 -65 to +200 200 Units V V A W °C °C Electrical Specifications: TC = 25 ± 5°C (Room Ambient ) Parameter Test Conditions Frequency Symbol BVCES ICES F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz F = 1.2, 1.3, 1.4 GHz RTH(JC) POUT GP Min 70 50 9.5 50 - Max 3.5 1.8 -9 3:1 1.5:1 Units V mA °C/W W dB % dB - Collector-Emitter Breakdown Voltage IC = 15mA Collector-Emitter Leakage Current Thermal Resistance Output Power Power Gain Collector Efficiency Input Return Loss Load Mismatch Tolerance Load Mismatch Stability VCE = 40V Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W Vcc = 40V, Pin = 5.6W ηC RL VSWR-T VSWR-S 1 ADVANCED: Data ...