Document
ME12P04/ME12P04-G
P- Channel 40-V (D-S) MOSFET
GENERAL DESCRIPTION
The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package.
FEATURES
● RDS(ON)≦45mΩ@VGS=-10V ● RDS(ON)≦80mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability
APPLICATIONS
● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch
PIN
CONFIGURATION
(TO-252-3L) Top View
● LCD Display inverter
e Ordering Information: ME12P04 (Pb-free)
ME12P04-G (Green product-Halogen free)
Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted)
Parameter
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case*
*The device mounted on 1in2 FR4 board with 2 oz copper
Symbol
VDS VGS TC=25℃ TC=70℃ ID IDM TC=25℃ TC=70℃ PD TJ RθJA RθJC
Maximum Ratings
-40 ±25 -18.6 -15 -75 25 16 -55 to 150 42 5
Unit
V V A A W ℃ ℃/W ℃/W
Mar, 2012-Ver2.1
01
ME12P04/ME12P04-G
P- Channel 40-V (D-S) MOSFET
Electrical Characteristics (TC =25℃ Unless Otherwise Specified)
Symbol Parameter
STATIC V(BR)DSS VGS(th) IGSS IDSS RDS(ON) VSD DYNAMIC Qg Qgs Qgd Rg Ciss Coss Crss Total Gate Charge Gate-Source Charge Gate-Drain Charge Gate Resistance Input capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-On Fall Time VDD=-15V, RL =15Ω ID=-1A, VGEN=-10V, RG=6Ω VDS=-20V, VGS=0V, F=1MHz VGS=0V, VDS=0V, f=1MHZ VDS=-20V, VGS=-4.5V, ID=-12A 10 4.3 4.5 6 860 120 35 30 8.5 70 7 ns pF Ω nC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate Leakage Current Zero Gate Voltage Drain Current Drain-Source On-State Resistancea Diode Forward Voltage VGS=0V, ID=-250μA VDS=VGS, ID=-250μA VDS=0V, VGS=±25V VDS=-40V, VGS=0V VDS=-40V, VGS=0V,TJ=55℃ VGS=-10V, ID= -12A VGS=-4.5V, ID= -6A IS=-1.7A, VGS=0V 35 57 -0.78 -40 -1 -1.9 -3 ±100 -1 -10 45 80 -1.2 V V nA μA mΩ V
Limit
Min
Typ
Max
Unit
td(on) tr td(off) tf
Notes:a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice.
Mar, 2012-Ver2.1
02
ME12P04/ME12P04-G
P- Channel 40-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)
Mar, 2012-Ver2.1
03
ME12P04/ME12P04-G
P- Channel 40-V (D-S) MOSFET
Typical Characteristics (TJ =25℃ Noted)
Mar, 2012-Ver2.1
04
ME12P04/ME12P04-G
P- Channel 40-V (D-S) MOSFET
TO-252-3L Package Outline
SYMBOL A B C D D1 E E1 L1 L2 L3 H P
MIN 2.10 0.40 0.40 5.30 2.20 6.30 4.80 0.90 0.50 0.00 8.90 2.30 BSC
MAX 2.50 0.90 0.90 6.30 2.90 6.75 5.50 1.80 1.10 0.20 10.40
Mar, 2012-Ver2.1
05
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