ME12P04-G

ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME12P04 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a very small outline surface mount package. FEATURES ● RDS(ON)≦45mΩ@VGS=-10V ● RDS(ON)≦80mΩ@VGS=-4.5V ● Super high density cell design for extremely low RDS(ON) ● Exceptional on-resistance and maximum DC current capability APPLICATIONS ● Power Management in Note book ● Portable Equipment ● Battery Powered System ● DC/DC Converter ● Load Switch PIN CONFIGURATION (TO-252-3L) Top View ● LCD Display inverter e Ordering Information: ME12P04 (Pb-free) ME12P04-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current* Pulsed Drain Current Maximum Power Dissipation Operating Junction Temperature Thermal Resistance-Junction to Ambient* Thermal Resistance-Junction to Case* *The device mounted on 1in2 FR4 board with 2 oz copper Symbol VDS VGS TC=25℃ TC=70℃ ID IDM TC=25℃ TC=70℃ PD TJ RθJA RθJC Maximum Ratings -40 ±25 -18.6 -15 -75 25 16 -55 to 150 42 5 Unit V...