Si7668ADP

Si7668ADP Vishay Siliconix N-Channel 30-V (D-S) MOSFET PRODUCT SUMMARY VDS (V) 30 RDS(on) (Ω) 0.003 at VGS = 10 V 0.0034 at VGS = 4.5 V ID (A)a 40 32 Qg (Typ.) 52 nC FEATURES Halogen-free According to IEC 61249-2-21 Available TrenchFET® Power MOSFET 100 % Rg Tested APPLICATIONS PowerPAK® SO-8 Low-Side DC/DC Comversion - Notebook, Server, VRM Module Fixed Telecom 5.15 mm D 6.15 mm S 1 2 3 S S G 4 D 8 7 6 5 D D D G Bottom View Ordering Information: Si7668ADP-T1-E3 (Lead (Pb)-free) Si7668ADP-T1-GE3 (Lead (Pb)-free and Halogen-free) S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Drain-Source Voltage Gate-Source Voltage TC = 25 °C Continuous Drain Current (TJ = 150 °C) TC = 70 °C TA = 25 °C TA = 70 °C Pulsed Drain Current Continuous Source-Drain Diode Current Avalanche Current Single-Pulse Avalanche Energy TC = 25 °C TA = 25 °C L = 0.1 mH TC = 25 °C Maximum Power Dissipation TC = 70 °C TA = 25 °C TA = 70 °C Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature)d, e TJ, Tstg PD IDM IS IAS EAS ID Symbol VDS VGS Limit 30 ± 12 40 32 31b, c 25b, c 70 40 4.3b, c 50 125 83 53 5.4b, c 3.4b, c - 55 to 150 260 °C W mJ A Unit V Notes: a. Based on TC = 70 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 10 s. d. See Solder Profile (www.vishay.com/ppg?73257). The PowerPAK SO-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulatio...