2SK2957S

2SK2957(L), 2SK2957(S) Silicon N Channel MOS FET High Speed Power Switching REJ03G1057-0600 (Previous: ADE-208-567D) Rev.6.00 Sep 07, 2005 Features Low on-resistance RDS(on) = 7 mΩ typ. 4 V gate drive devices. High speed switching Outline RENESAS Package code: PRSS0004AE-A (Package name: LDPAK(L)) 4 4 G RENESAS Package code: PRSS0004AE-B (Package name: LDPAK(S)-(1)) D 1. Gate 2. Drain 3. Source 4. Drain 1 1 2 3 2 3 S Rev.4.00 Sep 07, 2005 page 1 of 7 2SK2957(L), 2SK2957(S) Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID ID(pulse)Note1 IDR Pch Note2 Tch Tstg Ratings 30 ±20 50 200 50 75 150 –55 to +150 Unit V V A A A W °C °C Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Zero gate voltage drain current Gate to source leak current Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body–drain diode forward voltage Body–drain diode reverse recovery time Note: 3. Pulse test Symbol V(BR)DSS V(BR)GSS IDSS IGSS VGS(off) RDS(on) RDS(on) |yfs| Ciss Coss Crss td(on) tr td(off) tf VDF trr M...