Radiation Hardened Triple 3-Input AND Gate
HCTS11MS
November 1994
Radiation Hardened Triple 3-Input AND Gate
Pinouts
14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESI...
Description
HCTS11MS
November 1994
Radiation Hardened Triple 3-Input AND Gate
Pinouts
14 PIN CERAMIC DUAL-IN-LINE MIL-STD-1835 DESIGNATOR CDIP2-T14, LEAD FINISH C TOP VIEW
A1 1 14 VCC 13 C1 12 Y1 11 C3 10 B3 9 A3 8 Y3
Features
3 Micron Radiation Hardened SOS CMOS Total Dose 200K or 1 Mega-RAD (Si) Dose Rate Upset >1010 RAD(Si)/s 20ns Pulse Latch-Up Free Under Any Conditions Military Temperature Range: -55 C to +125 C Significant Power Reduction Compared to LSTTL ICs DC Operating Voltage Range: 4.5V to 5.5V LSTTL Input Compatibility - VIL = 0.8V Max. - VIH = VCC/2 Min Input Current Levels Ii ≤ 5µA at VOL, VOH
o o
B1 2 A2 3 B2 4 C2 5 Y2 6 GND 7
Description
The Intersil HCTS11MS is a Radiation Hardened Triple 3Input AND Gate. A high on all inputs forces the output to a High state. The HCTS11MS utilizes advanced CMOS/SOS technology to achieve high-speed operation. This device is a member of radiation hardened, high-speed, CMOS/SOS Logic Family. The HCTS11MS is supplied in a 14 lead Weld Seal Ceramic flatpack (K suffix) or a Weld Seal Ceramic Dual-In-Line Package (D suffix).
14 PIN CERAMIC FLAT PACK MIL-STD-1835 DESIGNATOR CDFP3-F14, LEAD FINISH C TOP VIEW
A1 B1 A2 B2 C2 Y2 GND 1 2 3 4 5 6 7 14 13 12 11 10 9 8 VCC C1 Y1 C3 B3 A3 Y3
Truth Table
INPUTS An L L L L H H H H Bn L L H H L L H H Cn L H L H L H L H OUTPUTS Yn L L L L L
Functional Diagram
An
Bn
Yn
Cn
L L H
NOTE: L = Logic Level Low, H = Logic level High
CAUTION: These devices are sensitive to electrostatic di...
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