TPCC8105

TPCC8105 TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (U-MOSⅥ) TPCC8105 Lithium Ion Battery Applications Power Management Switch Applications Unit: mm Small footprint due to a small and thin package Low drain-source ON-resistance: RDS (ON) = 6.0 mΩ (typ.)( VGS = −10 V) Low leakage current: IDSS = −10 µA (max) (VDS = −30 V) Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −0.5 mA) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Pulsed (Note 1) Drain power dissipation (Tc = 25°C) Drain power dissipation (t = 10 s) (Note 2a) Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Channel temperature Storage temperature range VDSS VDGR VGSS ID IDP PD PD PD EAS IAR Tch Tstg −30 V −30 V −25/+20 V −23 A −69 30 W 1.9 W 0.7 W 138 mJ −23 A 150 °C −55 to 150 °C Note: For Notes 1 to 4, refer to the next page. Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“...