Document
MOSFETs Silicon P-Channel MOS (U-MOS�)
TPCC8107
1. Applications
• Motor Drivers • DC-DC Converters • Switching Voltage Regulators
2. Features
(1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA)
3. Packaging and Internal Circuit
TPCC8107
TSON Advance
1,2,3: Source 4: Gate 5, 6, 7, 8: Drain
©2017-2023
1
Toshiba Electronic Devices & Storage Corporation
Start of commercial production
2012-07
2023-12-11 Rev.5.0
TPCC8107
4. Absolute Maximum Ratings (Note) (Ta = 25� unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
-60
V
Gate-source voltage
VGSS
-20/+10
Drain current (DC)
(Note 1)
ID
-25
A
Drain current (pulsed) Power dissipation
(Note 1)
IDP
(Tc = 25�)
PD
-75
46.8
W
Power dissipation
(t = 10 s)
(Note 2)
PD
2.27
W
Power dissipation
(t = 10 s)
(Note 3)
PD
0.84
W
Single-pulse avalanche energy
(Note 4)
EAS
63.0
mJ
Avalanche current Channel temperature
IAR
(Note 5)
Tch
-25
A
175
�
Storage temperature
Tstg
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance
(Tc = 25�) (t = 10 s) (t = 10 s)
(Note 2) (Note 3)
Note 1: Ensure that the channel temperature does not exceed 175�. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -25 V, Tch = 25� (initial), L = 137 µH, RG = 25 Ω, IAR = -25 A Note 5: Merely channel temperature is guaranteed 175�.
Storage temperature range is guaranteed as usual (-55 to 150�).
Symbol
Rth(ch-c) Rth(ch-a) Rth(ch-a)
Max
Unit
3.2
�/W
66
�/W
178
�/W
Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a)
Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
©2017-2023
2
Toshiba Electronic Devices & Storage Corporation
2023-12-11 Rev.5.0
TPCC8107
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25� unless otherwise specified)
Characteristics
Symbol
Test Condition
Min Typ. Max Unit
Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance
(Note 6)
IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON)
VGS = -16/+10 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 10 V VDS = -10 V, ID = -1.0 mA VGS = -6 V, ID = -12.5 A VGS = -10 V, ID = -12.5 A
�
�
±10
µA
�
�
-10
-60
�
�
V
-50
�
�
-2.0
�
-3.0
�
26.8 42.9 mΩ
�
23.5 30.5
Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode.
6.2. Dynamic Characteristics (Ta = 25� unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Ciss Crss Coss
tr ton tf toff
VDS = -10 V, VGS = 0 V, f = 1 MHz See Figure 6.2.1.
Min Typ. Max Unit
� 2930 �
pF
�
230
�
�
270
�
�
6
�
ns
�
15
�
�
44
�
�
206
�
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25� unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge
Symbol
Test Condition
Qg
Qgs1 Qgd
VDD ≈ -48 V, VGS = -10 V, ID = -25 A
Min Typ. Max Unit
�
63
�
nC
�
9
�
�
18
�
6.4. Source-Drain Characteristics (Ta = 25� unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (pulsed)
(Note 7)
IDRP
�
Diode forward voltage
VDSF IDR = -25 A, VGS = 0 V
Note 7: Ensure that the channel temperature does not exceed 175�.
Min Typ. Max Unit
�
�
-75
A
�
�
1.2
V
©2017-2023
3
Toshiba Electronic Devices & Storage Corporation
2023-12-11 Rev.5.0
7. Marking
Fig. 7.1 Marking
TPCC8107
©2017-2023
4
Toshiba Electro.