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TPCC8107 Dataheets PDF



Part Number TPCC8107
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon P-Channel MOSFET
Datasheet TPCC8107 DatasheetTPCC8107 Datasheet (PDF)

MOSFETs Silicon P-Channel MOS (U-MOS�) TPCC8107 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2023 1 Toshiba Electr.

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MOSFETs Silicon P-Channel MOS (U-MOS�) TPCC8107 1. Applications • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 23.5 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -60 V) (4) Enhancement mode: Vth = -2.0 to -3.0 V (VDS = -10 V, ID = -1.0 mA) 3. Packaging and Internal Circuit TPCC8107 TSON Advance 1,2,3: Source 4: Gate 5, 6, 7, 8: Drain ©2017-2023 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2012-07 2023-12-11 Rev.5.0 TPCC8107 4. Absolute Maximum Ratings (Note) (Ta = 25� unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -60 V Gate-source voltage VGSS -20/+10 Drain current (DC) (Note 1) ID -25 A Drain current (pulsed) Power dissipation (Note 1) IDP (Tc = 25�) PD -75 46.8 W Power dissipation (t = 10 s) (Note 2) PD 2.27 W Power dissipation (t = 10 s) (Note 3) PD 0.84 W Single-pulse avalanche energy (Note 4) EAS 63.0 mJ Avalanche current Channel temperature IAR (Note 5) Tch -25 A 175 � Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Channel-to-ambient thermal resistance (Tc = 25�) (t = 10 s) (t = 10 s) (Note 2) (Note 3) Note 1: Ensure that the channel temperature does not exceed 175�. Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1 Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2 Note 4: VDD = -25 V, Tch = 25� (initial), L = 137 µH, RG = 25 Ω, IAR = -25 A Note 5: Merely channel temperature is guaranteed 175�. Storage temperature range is guaranteed as usual (-55 to 150�). Symbol Rth(ch-c) Rth(ch-a) Rth(ch-a) Max Unit 3.2 �/W 66 �/W 178 �/W Fig. 5.1 Device Mounted on a Glass-Epoxy Board (a) Fig. 5.2 Device Mounted on a Glass-Epoxy Board (b) Note: This transistor is sensitive to electrostatic discharge and should be handled with care. ©2017-2023 2 Toshiba Electronic Devices & Storage Corporation 2023-12-11 Rev.5.0 TPCC8107 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25� unless otherwise specified) Characteristics Symbol Test Condition Min Typ. Max Unit Gate leakage current Drain cut-off current Drain-source breakdown voltage Drain-source breakdown voltage Gate threshold voltage Drain-source on-resistance (Note 6) IGSS IDSS V(BR)DSS V(BR)DSX Vth RDS(ON) VGS = -16/+10 V, VDS = 0 V VDS = -60 V, VGS = 0 V ID = -10 mA, VGS = 0 V ID = -10 mA, VGS = 10 V VDS = -10 V, ID = -1.0 mA VGS = -6 V, ID = -12.5 A VGS = -10 V, ID = -12.5 A � � ±10 µA � � -10 -60 � � V -50 � � -2.0 � -3.0 � 26.8 42.9 mΩ � 23.5 30.5 Note 6: If a reverse bias is applied between gate and source, this device enters V(BR)DSX mode. Note that the drainsource breakdown voltage is lowered in this mode. 6.2. Dynamic Characteristics (Ta = 25� unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Ciss Crss Coss tr ton tf toff VDS = -10 V, VGS = 0 V, f = 1 MHz See Figure 6.2.1. Min Typ. Max Unit � 2930 � pF � 230 � � 270 � � 6 � ns � 15 � � 44 � � 206 � Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25� unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge 1 Gate-drain charge Symbol Test Condition Qg Qgs1 Qgd VDD ≈ -48 V, VGS = -10 V, ID = -25 A Min Typ. Max Unit � 63 � nC � 9 � � 18 � 6.4. Source-Drain Characteristics (Ta = 25� unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (pulsed) (Note 7) IDRP � Diode forward voltage VDSF IDR = -25 A, VGS = 0 V Note 7: Ensure that the channel temperature does not exceed 175�. Min Typ. Max Unit � � -75 A � � 1.2 V ©2017-2023 3 Toshiba Electronic Devices & Storage Corporation 2023-12-11 Rev.5.0 7. Marking Fig. 7.1 Marking TPCC8107 ©2017-2023 4 Toshiba Electro.


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