TPCC8137

MOSFETs Silicon P-Channel MOS (U-MOS) TPCC8137 1. Applications Power Management Switches 2. Features (1) Small, thin package (2) Low drain-source on-resistance: RDS(ON) = 8.0 mΩ (typ.) (VGS = -4.5 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -20 V) (4) Enhancement mode: Vth = -0.5 to -1.2 V (VDS = -10 V, ID = -1 mA) 3. Packaging and Internal Circuit TPCC8137 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain TSON Advance 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS -20 V Gate-source voltage VGSS ±12 Drain current (DC) (Note 1) ID -13 A Drain current (pulsed) (Note 1) IDP -39 Power dissipation (Tc = 25) PD 30 W Power dissipation (t = 10 s) (Note 2) PD 1.9 W Power dissipation (t = 10 s) (Note 3) PD 0.7 W Single-pulse avalanche energy (Note 4) EAS 110 mJ Avalanche current IAR -13 A Channel temperature Tch 150  Storage temperature Tstg -55 to 150 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept an...