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SST12CP11

Silicon Storage Technology

2.4 GHz High-Power and High-Gain Power Amplifier

2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology Company SST12CP11 Product Brief The SST12CP11 ...


Silicon Storage Technology

SST12CP11

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2.4 GHz High-Power and High-Gain Power Amplifier A Microchip Technology Company SST12CP11 Product Brief The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The power amplifier IC also features easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package. Features High Gain: – Typically 34 dB gain across 2.4–2.5 GHz Block Diagram VCC1 VCC2 VCC3 High linear output power (at 5V) – >30 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 28.5 dBm – Added EVM ~3% up to 25 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 28.5 dBm RFIN Input Match RFOUT Bias Control High-speed power-up/down – Turn on/off time (10%-90%) <100 ns VREF1 Power Detection 10:1 VSWR survivability (unconditionally stable up to 28.5 dBm) On-chip power detection Simple input/output matching Packages available – 16-contact VQFN (3mm x 3mm x 0.9mm) VCCB VREF2 DET XXXXX B1.0 All devices are RoHS compliant Product Ordering Valid combinations for SST12CP11 SST12CP11-QVCE Applications WLAN ...




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