2.4 GHz High-Power and High-Gain Power Amplifier
2.4 GHz High-Power and High-Gain Power Amplifier
A Microchip Technology Company
SST12CP11
Product Brief
The SST12CP11 ...
Description
2.4 GHz High-Power and High-Gain Power Amplifier
A Microchip Technology Company
SST12CP11
Product Brief
The SST12CP11 is a high-power and high-gain power amplifier (PA) based on the highly-reliable InGaP/GaAs HBT technology.This PA can be easily configured for high-power applications with good power-added efficiency while operating over the 2.4-2.5 GHz frequency band. It typically provides 34 dB gain and has excellent linearity, typically ~3% added EVM at 25 dBm output power, which is essential for 54 Mbps 802.11g/n operation while meeting 802.11g spectrum mask at 28.5 dBm. The power amplifier IC also features easy board-level usage along with high-speed power-up/-down control. The SST12CP11 is offered in 16-contact VQFN package.
Features
High Gain:
– Typically 34 dB gain across 2.4–2.5 GHz
Block Diagram
VCC1 VCC2 VCC3
High linear output power (at 5V)
– >30 dBm P1dB – Meets 802.11g OFDM ACPR requirement up to 28.5 dBm – Added EVM ~3% up to 25 dBm for 54 Mbps 802.11g signal – Meets 802.11b ACPR requirement up to 28.5 dBm
RFIN
Input Match
RFOUT
Bias Control
High-speed power-up/down
– Turn on/off time (10%-90%) <100 ns
VREF1
Power Detection
10:1 VSWR survivability (unconditionally stable up to 28.5 dBm) On-chip power detection Simple input/output matching Packages available
– 16-contact VQFN (3mm x 3mm x 0.9mm)
VCCB VREF2 DET
XXXXX B1.0
All devices are RoHS compliant
Product Ordering
Valid combinations for SST12CP11
SST12CP11-QVCE
Applications
WLAN ...
Similar Datasheet