NIKO-SEM
P-Channel Enhancement Mode Field Effect Transistor
P1504EDG
TO-252 Halogen-Free & Lead-Free
PRODUCT SUMMARY ...
NIKO-SEM
P-Channel Enhancement Mode Field Effect
Transistor
P1504EDG
TO-252 Halogen-Free & Lead-Free
PRODUCT SUMMARY V(BR)DSS -40V RDS(ON) 15mΩ ID -45A
D
G S
1. GATE 2. DRAIN 3. SOURCE
ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Avalanche Energy Power Dissipation Junction & Storage Temperature Range
2 1
SYMBOL VDS VGS
LIMITS -40 ±20 -45 -36 -150 -45 102 50 32
UNITS V V
TC = 25 °C TC = 70 °C
ID IDM IAS
A
L = 0.1mH Tc = 25 °C Tc = 70 °C
EAS PD TJ, Tstg
mJ W °C
-55 to 150
THERMAL RESISTANCE RATINGS THERMAL RESISTANCE Junction-to-Ambient Junction-to-Case
1 2
SYMBOL RθJA RθJC
TYPICAL
MAXIMUM 75 2.5
UNITS °C / W
Pulse width limited by maximum junction temperature. VDD = -20V . Starting TJ = 25˚C.
ELECTRICAL CHARACTERISTICS (TJ = 25 °C, Unless Otherwise Noted) PARAMETER SYMBOL TEST CONDITIONS STATIC Drain-Source Breakdown Voltage Gate Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current V(BR)DSS VGS(th) IGSS IDSS VGS = 0V, ID = 250µA VDS = VGS, ID = 250µA VDS = 0V, VGS = ±20V VDS = -32V, VGS = 0V VDS = -30V, VGS = 0V, TJ = 55 °C -40 -1.7 -2.2 -3 ±100 1 10 µA nA V LIMITS UNIT MIN TYP MAX
REV1.6 1
Dec-02-2010
NIKO-SEM
P-Channel Enhancement Mode Field Effect
Transistor
P1504EDG
TO-252 Halogen-Free & Lead-Free
Drain-Source On-State 1 Resistance Forward Transconductance On-State Drain Current
1 1
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