DatasheetsPDF.com

C3127 Dataheets PDF



Part Number C3127
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SC3127
Datasheet C3127 DatasheetC3127 Datasheet (PDF)

2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC31.

  C3127   C3127


Document
2SC3127, 2SC3128, 2SC3510 Silicon NPN Epitaxial Application UHF/VHF wide band amplifier Outline MPAK 2SC3127 3 1 2 1. Emitter 2. Base 3. Collector 2SC3127, 2SC3128, 2SC3510 TO-92 (2) 2SC3128, 2SC3510 1. Base 2. Emitter 3. Collector 3 2 1 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Note: Symbol VCBO VCEO VEBO IC PC Tj Tstg 2SC3127 * 1 20 12 3 50 150 150 –55 to +150 2SC3128 20 12 3 50 350 150 –55 to +150 2SC3510 20 12 3 50 600 150 –55 to +150 Unit V V V mA mW °C °C 1. Marking for 2SC3127 is “ID–”. 2 2SC3127, 2SC3128, 2SC3510 Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Collector to emitter breakdown voltage Emitter cutoff current Collector cutoff current DC current transfer ratio Collector output capacitance Gain bandwidth product Power gain Noise figure Symbol V(BR)CBO V(BR)CEO I EBO I CBO hFE Cob fT PG NF Min 20 12 — — 30 — 3.5 — — Typ — — — — 90 0.9 4.5 10.5 2.2 Max — — 10 0.5 200 1.5 — — — pF GHz dB dB Unit V V µA µA Test conditions I C = 10 µA, IE = 0 I C = 1 mA, RBE = ∞ VEB = 3 V, IC = 0 VCB = 12 V, IE = 0 VCE = 5 V, IC = 20 mA VCB = 5 V, IE = 0, f = 1 MHz VCE = 5 V, IC = 20 mA VCE = 5 V, IC = 20 mA, f = 900 MHz VCE = 5 V, IC = 5 mA, f = 900 MHz Maximum Collector Dissipation Curve Collector Power Dissipation Pc (mW) 600 2SC3510 400 2SC3128 DC Current Transfer Ratio hFE 200 DC Current Transfer Ratio vs. Collector Current VCE = 5 V 160 120 80 200 2SC3127 40 0 0 50 100 150 Ambient Temperature Ta (°C) 200 1 2 5 10 20 50 Collector Current IC (mA) 100 3 2SC3127, 2SC3128, 2SC3510 Gain Bandwidth Product vs. Collector Current Collector Output Capacitance Cob (pF) 5.0 Gain Bandwidth Product fT (GHz) 2.0 Collector Output Capacitance vs. Collector to Base Voltage 4.0 1.6 f = 1 MHz IE = 0 1.2 3.0 2.0 VCE = 5 V f = 500 MHz 0.8 1.0 0.4 0 1 2 5 10 20 Collector Current IC (mA) 50 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) Reverse Transfer Capacitance vs. Collector to Base Voltage Reverse Transfer Capacitance Cre (pF) 2.0 f = 1 MHz Emitter Common Power Gain PG (dB) Noise Figure NF (dB) 1.6 20 Power Gain and Noise Figure vs. Collector Current 16 PG 12 VCE = 5 V f = 500 MHz 8 NF 1.2 0.8 0.4 4 0 1 2 5 10 20 50 Collector to Base Voltage VCB (V) 0 0 10 20 30 40 Collector Current IC (mA) 50 4 2SC3127, 2SC3128, 2SC3510 Power Gain and Noise Figure vs. Collector Current 12 2nd I.M. Distortion 2nd I.M.D. (dB) 2nd I.M. Distortion vs. Collector Current 70 Power Gain PG (dB) Noise Figure NF (dB) 10 PG VCE = 5 V f = 900 MHz 60 8 50 6 NF 4 40 30 VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dBµ f2nd = 410 MHz 0 10 20 30 40 Collector Current IC (mA) 50 2 0 10 20 30 40 Collector Current IC (mA) 50 20 2nd I.M. Distortion vs. Collector Current 70 2nd I.M. Distortion 2nd I.M.D. (dB) 3rd I.M. Distortion 3rd I.M.D. (dB) 3rd I.M. Distortion vs. Collector Current 80 f = 190 MHz 60 70 f = 220 MHz 60 50 40 50 30 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dBµ f2nd = 1,250 MHz 0 10 20 30 40 Collector Current IC (mA) 50 40 VCC = 12 V f1 = 210 MHz, f2 = 200 MHz Vout = 100 dBµ f3rd = 190 MHz, 220 MHz 0 10 20 30 40 Collector Current IC (mA) 50 20 30 5 2SC3127, 2SC3128, 2SC3510 3rd I.M. Distortion vs. Collector Current 70 3rd I.M. Distortion 3rd I.M.D. (dB) f = 550 MHz 60 f = 700 MHz 50 40 30 VCC = 12 V f1 = 600 MHz, f2 = 650 MHz Vout = 100 dBµ f3rd = 550 MHz, 700 MHz 0 10 20 30 40 Collector Current IC (mA) 50 20 Noise Figure vs. Frequency 10 VCC = 12 V IC = 20 mA Noise Figure NF (dB) 8 Post AMP. NF 6 NF 4 2 0 400 500 600 700 Frequency f (MHz) 800 900 6 2SC3127, 2SC3128, 2SC3510 Power Gain vs. Frequency 10 Power Gain PG (dB) 8 VCC = 12 V, IC = 20 mA Input Power Level –50 dBm 6 4 2 0 250 500 Frequency f (MHz) 750 1,000 Power Gain vs. Frequency 10 Power Gain PG (dB) 8 IC = 30 mA IC = 20 mA 4 VCC = 12 V Input Power Level –50 dBm IC = 10 mA IC = 5 mA 6 2 0 250 500 Frequency f (MHz) 750 1,000 7 2SC3127, 2SC3128, 2SC3510 Input and Output Reflection Coefficient vs. Frequency Input and Output Reflection Coefficient S11&S22 (dB) 0 S22 –5 –10 S11 –15 VCC = 12 V, IC = 20 mA Input Power Level –50 dBm 0 250 500 Frequency f (MHz) 750 1,000 –20 Vhf to Uhf Wide Band Amp. Circuit 50 p 470 Input Rg = 50 Ω 50 p 50 p 5p T1 1,200 p Output L1 L2 2.4 k 1.2 p 4,400 p 110 4,400 p 2.5 p RL = 50 Ω 2,200 p VBB VCC Unit R : Ω C:F Parts Spcecification L1 : Inside dia φ3.0 mm, φ0.4 mm Polyurethane Coated Copper wire 12 Turns. L2 : Inside dia φ3.5 mm, φ0.5 mm Polyurethane Coated Copper wire 9 Turns. T1 : Balance wind used Ferrite Core Outside dia φ4.0 mm, Inside dia φ2.0 mm φ0.1 mm Polyurethane Coated Copper wire 3 Turns. Ratio Input to Output is 2 : 1 8 Unit: mm 0.65 0.10 3 – 0.4 + – 0.05 0.16 – 0.06 + 0.10 1.5 ± 0.15 + 0.2 – 0.6 0 –.


TPC8084 C3127 C3773


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site.
(Privacy Policy & Contact)