Silicon P-Channel MOSFET
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8133
1. Applications
• Lithium-Ion Secondary Batteries • Power Management Swit...
Description
MOSFETs Silicon P-Channel MOS (U-MOS)
TPC8133
1. Applications
Lithium-Ion Secondary Batteries Power Management Switches
2. Features
(1) Small footprint due to small and thin package (2) Low drain-source on-resistance: RDS(ON) = 11 mΩ (typ.) (VGS = -10 V) (3) Low leakage current: IDSS = -10 µA (max) (VDS = -40 V) (4) Enhancement mode: Vth = -0.8 to -2.0 V (VDS = -10 V, ID = -0.5 mA)
3. Packaging and Internal Circuit
TPC8133
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP-8
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
(t = 10 s) (t = 10 s)
(Note 1) (Note 1) (Note 2) (Note 3) (Note 4)
VDSS VGSS
ID IDP PD PD EAS IAR Tch Tstg
-40
V
-25/+20
-9
A
-36
1.9
W
1.0
W
37
mJ
-9
A
150
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") a...
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