TPC8048-H

TPC8048-H TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (U-MOSⅥ-H) TPC8048-H Switching Regulator Applications Motor Drive Applications DC-DC Converter Applications Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 17 nC (typ.) Low drain-source ON-resistance: RDS (ON) = 4.6 mΩ (typ.) High forward transfer admittance: |Yfs| = 60 S (typ.) Low leakage current: IDSS = 10 μA (max) (VDS = 60 V) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain-source voltage Drain-gate voltage (RGS = 20 kΩ) Gate-source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR (Tc = 25℃) (Note 4) Channel temperature Storage temperature range EAR Tch Tstg Rating 60 60 ±20 16 64 1.9 Unit V V V JEDEC A ⎯ ⎯ 2-6J1B Pulsed (Note 1) (t = 10 s) (Note 2a) JEITA TOSHIBA Drain power dissipation W Weight: 0.085g (typ.) 1.0 W Drain power dissipation (t = 10 s) (Note 2b) Single-pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy 92 16 0.05 150 −55 to 150 mJ A mJ °C °C Circuit Configuration 8 7 6 5 Note: For Notes 1 to 4, refer to the next page. 1 2 3 4 Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. op...