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■■APPLICATION:General Purpose Amplifier Applications..
A844
—PNP silicon —
■■MAXIMUM RATINGS(Ta=25℃)
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·ç¹âÐÀ¼¼Êõ×ÊÁÏ
■■APPLICATION:General Purpose Amplifier Applications..
A844
—
PNP silicon —
■■MAXIMUM RATINGS(Ta=25℃)
PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector Power Dissipation Junction Temperature Storage Temperature Range SYMBOL RATING UNIT VCBO VCEO VEBO IC PC TJ Tstg -55 -55 -5 -100 300 150 V V V mA mW ℃
﹣55~150 ℃
■■ELECTRICAL CHARACTERISTICS(Ta=25℃)
PARAMETER DC Current Gain Collector Cut-off Current Emitter Cut-off Current Collector-Base Breakdown Voltage SYMBOL hFE ICBO IEBO BVCBO -55 -55 -5 -0.66 -0.1 200 2 -0.75 -0.5 MIN. 160 TYP. MAX. UNIT 500 -0.1 -0.05 µA µA V V V V V TEST CONDITION VCE= -12V,Ic= -2mA VCB= -18V,IE=0 VEB= -2V,Ic=0 Ic= -0.1mA,IE=0 Ic= -1mA,IB=0 IE= -0.1mA,Ic=0 VCE= -12V,Ic= -2mA Ic= -10mA,IB= -1mA
Collector-Emitter Breakdown Voltage BVCEO Emitter-Base Breakdown Voltage Base-Emitter Voltage Collector-Emitter Saturation Voltage Gain bandwidth product Common Base Output Capacitance BVEBO VBE VCE(sat) fT Cob
MHz Ic= -2mA,VCE= -12V PF VCB= -10V, IE=0, f = 1MHz
■■hFE Classification Classification hFE C 160~320 D 250~500
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