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K1404 Dataheets PDF



Part Number K1404
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK1404
Datasheet K1404 DatasheetK1404 Datasheet (PDF)

2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperatu.

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2SK1404 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current No secondary breakdown Suitable for switching regulator and DC-DC converter Outline TO-220FM D G 1 2 3 1. Gate 2. Drain 3. Source S 2SK1404 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10 µs, duty cycle ≤ 1% 2. Value at TC = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 600 ±30 5 20 5 35 150 –55 to +150 Unit V V A A A W °C °C 2 2SK1404 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol Min V(BR)DSS V(BR)GSS I GSS 600 ±30 — — 2.0 — 3.0 — — — — — — — — — Typ — — — — — 1.1 5.0 1000 250 45 12 45 105 55 0.9 500 Max — — ±10 250 3.0 1.5 — — — — — — — — — — Unit V V µA µA V Ω S pF pF pF ns ns ns ns V ns I F = 5 A, VGS = 0 I F = 5 A, VGS = 0, diF/dt = 100 A/µs I D = 2.5 A, VGS = 10 V, RL = 12 Ω Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±25 V, VDS = 0 VDS = 500 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 2.5 A, VGS = 10 V *1 I D = 2.5 A, VDS = 10 V *1 VDS = 10 V, VGS = 0, f = 1 MHz Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note: 1. Pulse test VGS(off) RDS(on) |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 3 2SK1404 Power vs. Temperature Derating 60 Channel Dissipation Pch (W) 50 30 ar ea Maximum Safe Operation Area Drain Current ID (A) 10 3 1 0.3 0.1 10 10 µs O is per lim at ite ion d in by th R is (o n) 40 0 DS 1 µs PW = pe O ra tio n D C m s 10 s m (1 20 Sh ot ) = 25 °C (T C Ta = 25°C ) 0.05 0 50 100 Case Temperature TC (°C) 150 1 3 10 30 100 300 1,000 Drain to Source Voltage VDS (V) Typical Output Characteristics 10 10 V 8 Drain Current ID (A) 6V 5V Drain Current ID (A) Pulse Test 8 4.5 V 10 Typical Transfer Characteristics VDS = 20 V Pulse Test 6 6 4 4V VGS = 3 V 0 3.5 V 4 2 2 TC = 75°C 25°C –25°C 10 30 40 20 50 Drain to Source Voltage VDS (V) 0 2 6 8 4 10 Gate to Source Voltage VGS (V) 4 2SK1404 Drain to Source Saturation Voltage VDS (on) (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage 10 Pulse Test 8 ID = 5 A Static Drain to Source on State Resistance vs. Drain Current Static Drain to Source on State Resistance RDS (on) (Ω) 50 Pulse Test 20 10 5 2 1 15 V 0.5 0.2 0.5 1 2 5 10 Drain Current ID (A) 20 VGS = 10 V 6 4 2A 2 1A 0 8 20 4 12 16 Gate to Source Voltage VGS (V) Static Drain to Source on State Resistance vs. Temperature Static Drain to Source on State Resistance RDS (on) (Ω) Forward Transfer Admittance yfs (S) 5 VGS = 10 V Pulse Test 10 Forward Transfer Admittance vs. Drain Current VDS = 20 V Pulse Test 5 2 1 0.5 0.2 0.1 0.05 75°C –25°C TC = 25°C 4 3 ID = 5 A 2 1A 2A 1 0 –40 40 0 80 120 Case Temperature TC (°C) 160 0.1 2 0.2 0.5 1 Drain Current ID (A) 5 5 2SK1404 Body to Drain Diode Reverse Recovery Time 1,000 Reverse Recovery Time trr (ns) 500 Capacitance C (pF) 1,000 10,000 VGS = 0 f = 1 MHz Ciss Typical Capacitance vs. Drain to Source Voltage 200 100 50 20 10 0.05 di/dt = 50 A/µs, Ta = 25°C VGS = 0 Pulse Test 0.1 0.2 2 1 0.5 Reverse Drain Current IDR (A) 5 100 Coss Crss 10 0 20 50 10 30 40 Drain to Source Voltage VDS (V) Dynamic Input Characteristics 1,000 Drain to Source Voltage VDS (V) 20 Gate to Source Voltage VGS (V) Switching Characteristics 500 . . 30 V VGS = 10 V, VDD = PW = 2 µs, duty < 0.1% td (off) 100 50 tr td (on) 10 5 0.1 tf VDD = 100 V 250 V 400 V VGS 600 12 400 VDS ID = 5 A VDD = 400 V 250 V 100 V 8 Switching Time t (ns) 800 16 200 20 200 4 0 0 8 24 32 16 Gate Charge Qg (nc) 40 0.2 2 5 0.5 1 Drain Current ID (A) 10 6 2SK1404 Reverse Drain Current vs. Source to Drain Voltage 10 Reverse Drain Current IDR (A) Pulse Test 8 6 4 VGS = 5 V, 10 V 2 0, –5 V 0 0.8 2.0 0.4 1.2 1.6 Source to Drain Voltage VSD (V) Normalized Transient Thermal Impedance γS (t) Normalized Transient Thermal Impedance vs. Pulse Width 3 D=1 1.0 0.5 0.3 0.2 TC = 25°C 0.1 0.1 0.05 θch–c (t) = γS (t) · θch–c θch–c = 3.57°C/W, TC = 25°C PDM PW D = PW T 0.03 1 0.02 0.01 ulse tP Sho 100 µ 1m 10 m 100 m Pulse Width PW (s) T 0.01 10 µ 1 10 Switching Time Test Circuit Vin Monitor Waveforms 90% Vout Monitor D.U.T. RL Vin 10 V 50 Ω Vin Vout VDD . = . 30 V td (on) 10% 10% 10% 90% td (off) 90% tr tf 7 10.0 ± 0.3 7.0 ± 0.3 φ 3.2 ± 0.2 2.8 ± 0.2 2.5 ± 0.2 Unit: mm 0.6 5.0 ± 0.3 2.0 ± 0.3 1.2 ± 0.2 1.4 ± 0.2 12.0 ± 0.3 .


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