K2085 Datasheet PDF | Hitachi Semiconductor





(PDF) K2085 Datasheet PDF

Part Number K2085
Description 2SK2085
Manufacture Hitachi Semiconductor
Total Page 9 Pages
PDF Download Download K2085 Datasheet PDF

Features: 2SK2085 Silicon N-Channel MOS FET Appli cation High speed power switching Feat ures • • • • • Low on-resista nce High speed switching Low drive curr ent 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Dra in 3. Gate S 2SK2085 Absolute Maximum Ratings (Ta = 25°C) Item Drain to sou rce voltage Gate to source voltage Drai n current Drain peak current Body to dr ain diode reverse drain current Channel dissipation Channel temperature Storag e temperature Notes 1. PW ≤ 10 µs, d uty cycle ≤ 1 % 2. Value at Tc = 25° C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 1.0 4.0 1.0 0.9 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2085 Electrica l Characteristics (Ta = 25°C) Item Dra in to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output cap.

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K2085 datasheet
2SK2085
Silicon N-Channel MOS FET
Application
High speed power switching
Features
Low on-resistance
High speed switching
Low drive current
4 V gate drive device can be driven from 5 V source
Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D 321
1. Source
G 2. Drain
3. Gate
S

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