Document
2SK2085
Silicon N-Channel MOS FET
Application
High speed power switching
Features
• • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter
Outline
TO-92 Mod
D G
32
1 1. Source 2. Drain 3. Gate
S
2SK2085
Absolute Maximum Ratings (Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg
2 1
Ratings 100 ±20 1.0 4.0 1.0 0.9 150 –55 to +150
Unit V V A A A W °C °C
2
2SK2085
Electrical Characteristics (Ta = 25°C)
Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.7 — — — — — — — — — Typ — — — — — 0.6 0.75 1.2 130 50 12 7 6.5 55 20 0.85 80 Max — — ±10 100 2.0 0.9 1.35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1.0 A, VGS = 0 I F = 1.0 A, VGS = 0, diF / dt = 50 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.5 A VGS = 10 V*1 I D = 0.5 A VGS = 4 V*1 I D = 0.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 0.5 A VGS = 10 V RL = 60 Ω
Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on)
3
2SK2085
Power vs. Temperature Derating 1.6 Pch (W) I D (A)
10 3 1 0.3 0.1 0.03 0.01 0.003
10
10 µs µs
Maximum Safe Operation Area
1.2
PW
Channel Dissipation
Drain Current
0.8
DC Operation in Op this area is er limited by R DS(on) a
1 m s = 10 (1 m sh s ot )
0
tio
n
0.4
Ta = 25°C
0.3 1 3 10 30 100 200
0
50
100
150 Ta (°C)
200
0.001 0.1
Ambient Temperature
Drain to Source Voltage
V DS (V)
Typical Output Characteristics 5
6V
Typical Transfer Characteristics 5 V DS = 10 V Pulse Test
Pulse Test 4V (A) 3.5 V ID Drain Current 3V 2.5 V VGS = 2 V
I D (A)
4
8V 10 V
5V
4
3
Drain Current
3
2
2 –25 °C Tc = 25 °C 75 °C
1
1
0
2 4 6 Drain to Source Voltage
8 V DS (V)
10
0
1 2 3 Gate to Source Voltage
4 5 V GS (V)
4
2SK2085
Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 1.0 Static Drain to Source State Resistance vs. Drain Current 2 Pulse Test 1 V GS = 4 V 10 V
0.8 1A 0.6
0.5
0.4
0.5 A I D = 0.2 A
0.2
0.2
0
2 4 6 Gate to Source Voltage
8 V GS (V)
10
0.1 0.1
0.2
0.5 1 2 Drain Current I D (A)
5
Static Drain to Source on State Resistance R DS(on) ( Ω)
Forward Transfer Admittance |yfs| (S)
Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.2 A 0.5 A ID=1A V GS = 4 V 1A 0.5 A 0.2 A 10 V
Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25 °C 25 °C 75 °C
2 1 0.5
1.2
0.8
0.4 0 –40
0.2 0.1 0.05 0.1
V DS = 10 V Pulse Test 0.2 0.5 1 2 5
0 40 80 120 160 Case Temperature Tc (°C)
Drain Current I D (A)
5
2SK2085
Body to Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Capacitance C (pF) di / dt = 50 A / µs V GS = 0, Ta = 25 °C 100 Typical Capacitance vs. Drain to Source Voltage 1000
Ciss 100 Coss
50
10
Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50
20 1 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A)
10 0.02
Drain to Source Voltage V DS (V)
Dynamic Input Characteristics V DS (V) V GS (V) 200 20
200 100 Switching Time t (ns) 50 20 10 5 2 0.02
Switching Characteristics
160 V DD = 25 V 50 V 80 V VDS VGS
I D= 1 A
16
t d(off) V GS = 10 V V DD = 30 V PW = 2 µs duty < 1 % tf
Drain to Source Voltage
120
12
80
8
Gate to Source Voltage
t d(on) tr
40
V DD = 25 V 50 V 80 V 2 8 6 8 Gate Charge Qg (nc)
4 0 10
0
0.05 0.1 0.2 Drain Current
0.5 1 I D (A)
2
6
2SK2085
Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4
3
2 10 V
V GS = 0, –5 V
1
5V 0.4 0.8 1.2 1.6 2.0
0
Source to Drain Voltage
V SD (V)
Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% Vout Monitor
Waveform
90%
10% 90% td(off) tf
90% td(on) tr
7
Unit: mm
4.8 ± 0.3
3.8 ± 0.3
0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max
2.3 Max
10.1 Min
8.0 ± 0.5
0.5
1.27 2.54
Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademar.