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K2085 Dataheets PDF



Part Number K2085
Manufacturers Hitachi Semiconductor
Logo Hitachi Semiconductor
Description 2SK2085
Datasheet K2085 DatasheetK2085 Datasheet (PDF)

2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK2085 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel di.

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2SK2085 Silicon N-Channel MOS FET Application High speed power switching Features • • • • • Low on-resistance High speed switching Low drive current 4 V gate drive device can be driven from 5 V source Suitable for Switching regulator, DC - DC converter Outline TO-92 Mod D G 32 1 1. Source 2. Drain 3. Gate S 2SK2085 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body to drain diode reverse drain current Channel dissipation Channel temperature Storage temperature Notes 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C Symbol VDSS VGSS ID I D(pulse)* I DR Pch* Tch Tstg 2 1 Ratings 100 ±20 1.0 4.0 1.0 0.9 150 –55 to +150 Unit V V A A A W °C °C 2 2SK2085 Electrical Characteristics (Ta = 25°C) Item Drain to source breakdown voltage Gate to source breakdown voltage Gate to source leak current Symbol V(BR)DSS V(BR)GSS I GSS Min 100 ±20 — — 1.0 — — Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Body to drain diode forward voltage Body to drain diode reverse recovery time Note 1. Pulse Test |yfs| Ciss Coss Crss t d(on) tr t d(off) tf VDF t rr 0.7 — — — — — — — — — Typ — — — — — 0.6 0.75 1.2 130 50 12 7 6.5 55 20 0.85 80 Max — — ±10 100 2.0 0.9 1.35 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 1.0 A, VGS = 0 I F = 1.0 A, VGS = 0, diF / dt = 50 A / µs Test conditions I D = 10 mA, VGS = 0 I G = ±100 µA, VDS = 0 VGS = ±16 V, VDS = 0 VDS = 80 V, VGS = 0 I D = 1 mA, VDS = 10 V I D = 0.5 A VGS = 10 V*1 I D = 0.5 A VGS = 4 V*1 I D = 0.5 A VDS = 10 V*1 VDS = 10 V VGS = 0 f = 1 MHz I D = 0.5 A VGS = 10 V RL = 60 Ω Zero gate voltage drain current I DSS Gate to source cutoff voltage Static drain to source on state resistance VGS(off) RDS(on) 3 2SK2085 Power vs. Temperature Derating 1.6 Pch (W) I D (A) 10 3 1 0.3 0.1 0.03 0.01 0.003 10 10 µs µs Maximum Safe Operation Area 1.2 PW Channel Dissipation Drain Current 0.8 DC Operation in Op this area is er limited by R DS(on) a 1 m s = 10 (1 m sh s ot ) 0 tio n 0.4 Ta = 25°C 0.3 1 3 10 30 100 200 0 50 100 150 Ta (°C) 200 0.001 0.1 Ambient Temperature Drain to Source Voltage V DS (V) Typical Output Characteristics 5 6V Typical Transfer Characteristics 5 V DS = 10 V Pulse Test Pulse Test 4V (A) 3.5 V ID Drain Current 3V 2.5 V VGS = 2 V I D (A) 4 8V 10 V 5V 4 3 Drain Current 3 2 2 –25 °C Tc = 25 °C 75 °C 1 1 0 2 4 6 Drain to Source Voltage 8 V DS (V) 10 0 1 2 3 Gate to Source Voltage 4 5 V GS (V) 4 2SK2085 Drain to Source Saturation Voltage vs. Gate to Source Voltage Drain to Source Saturation Voltage V DS(on) (V) Pulse Test Drain to Source On State Resistance R DS(on) ( Ω ) 1.0 Static Drain to Source State Resistance vs. Drain Current 2 Pulse Test 1 V GS = 4 V 10 V 0.8 1A 0.6 0.5 0.4 0.5 A I D = 0.2 A 0.2 0.2 0 2 4 6 Gate to Source Voltage 8 V GS (V) 10 0.1 0.1 0.2 0.5 1 2 Drain Current I D (A) 5 Static Drain to Source on State Resistance R DS(on) ( Ω) Forward Transfer Admittance |yfs| (S) Static Drain to Source on State Resistance vs. Temperature 2.0 Pulse Test 1.6 0.2 A 0.5 A ID=1A V GS = 4 V 1A 0.5 A 0.2 A 10 V Forward Transfer Admittance vs. Drain Current 10 5 Tc = –25 °C 25 °C 75 °C 2 1 0.5 1.2 0.8 0.4 0 –40 0.2 0.1 0.05 0.1 V DS = 10 V Pulse Test 0.2 0.5 1 2 5 0 40 80 120 160 Case Temperature Tc (°C) Drain Current I D (A) 5 2SK2085 Body to Drain Diode Reverse Recovery Time 200 Reverse Recovery Time trr (ns) Capacitance C (pF) di / dt = 50 A / µs V GS = 0, Ta = 25 °C 100 Typical Capacitance vs. Drain to Source Voltage 1000 Ciss 100 Coss 50 10 Crss VGS = 0 f = 1 MHz 0 10 20 30 40 50 20 1 0.05 0.1 0.2 0.5 1 2 Reverse Drain Current I DR (A) 10 0.02 Drain to Source Voltage V DS (V) Dynamic Input Characteristics V DS (V) V GS (V) 200 20 200 100 Switching Time t (ns) 50 20 10 5 2 0.02 Switching Characteristics 160 V DD = 25 V 50 V 80 V VDS VGS I D= 1 A 16 t d(off) V GS = 10 V V DD = 30 V PW = 2 µs duty < 1 % tf Drain to Source Voltage 120 12 80 8 Gate to Source Voltage t d(on) tr 40 V DD = 25 V 50 V 80 V 2 8 6 8 Gate Charge Qg (nc) 4 0 10 0 0.05 0.1 0.2 Drain Current 0.5 1 I D (A) 2 6 2SK2085 Reverse Drain Current vs. Source to Drain Voltage 5 Reverse Drain Current I DR (A) Pulse Test 4 3 2 10 V V GS = 0, –5 V 1 5V 0.4 0.8 1.2 1.6 2.0 0 Source to Drain Voltage V SD (V) Switching Time Test Circuit Vin Monitor D.U.T. RL Vin Vin 10 V 50 Ω V DD = 30 V Vout 10% 10% Vout Monitor Waveform 90% 10% 90% td(off) tf 90% td(on) tr 7 Unit: mm 4.8 ± 0.3 3.8 ± 0.3 0.65 ± 0.1 0.75 Max 0.5 ± 0.1 0.7 0.60 Max 2.3 Max 10.1 Min 8.0 ± 0.5 0.5 1.27 2.54 Hitachi Code JEDEC EIAJ Weight (reference value) TO-92 Mod — Conforms 0.35 g Cautions 1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent, copyright, trademar.


HB6298A-2009 K2085 K2568


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