K2930

2SK2930 Silicon N Channel MOS FET High Speed Power Switching ADE-208-553C (Z) 4th. Edition Jun 1998 Features Low on-resistance R DS =0.020 Ω typ. High speed switching 4V gate drive device can be driven from 5V source Outline TO–220AB D G 1 2 S 3 1. Gate 2. Drain(Flange 3. Source 2SK2930 Absolute Maximum Ratings (Ta = 25°C) Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Note: Symbol VDSS VGSS ID I D(pulse) I DR I AP Note3 Note3 Note2 Note1 Ratings 60 ±20 35 140 35 35 105 50 150 –55 to +150 Unit V V A A A A mJ W °C °C EAR Pch Tch Tstg 1. PW ≤ 10 µs, duty cycle ≤ 1 % 2. Value at Tc = 25°C 3. Value at Tch = 25°C, Rg ≥ 50Ω 2 2SK2930 Electrical Characteristics (Ta = 25°C) Item Symbol Min 60 ±20 — — 1.5 — — 14 — — — — — — — — — Typ — — — — — 0.020 0.032 23 1100 540 200 15 180 175 195 0.95 40 Max — — ±10 10 2.5 0.026 0.050 — — — — — — — — — — Unit V V µA µA V Ω Ω S pF pF pF ns ns ns ns V ns I F = 35A, VGS = 0 I F = 35A, VGS = 0 diF/ dt =50A/µs Test Conditions I D = 10mA, VGS = 0 I G = ±100µA, VDS = 0 VGS = ±16V, VDS = 0 VDS = 60 V, VGS = 0 I D = 1mA, VDS = 10V I D = 15A, VGS = 10VNote4 I D = 15A, VGS = 4V Note4 I D = 15A, VDS = 10V Note4 VDS = 10V VGS = 0 f = 1MHz I D = 15A, VGS = 10V RL = 2Ω Drain to source breakdown voltage V(BR)DSS Gate to source breakdown voltage V(BR)GSS Gate to source le...