Silicon N-Channel MOSFET
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCA8055-H
1. Applications
• High-Efficiency DC-DC Converters • Notebook PCs • ...
Description
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPCA8055-H
1. Applications
High-Efficiency DC-DC Converters Notebook PCs Mobile Handsets
2. Features
(1) Small, thin package (2) High-speed switching (3) Small gate charge: QSW = 21 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 4.5 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 30 V) (6) Enhancement mode: Vth = 1.3 to 2.3 V (VDS = 10 V, ID = 1.0 mA)
3. Packaging and Internal Circuit
TPCA8055-H
1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain
SOP Advance
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Power dissipation Power dissipation Single-pulse avalanche energy Avalanche current Channel temperature Storage temperature
(Tc = 25) (t = 10 s) (t = 10 s)
(Note 1) (Note 1)
(Note 2) (Note 3) (Note 4)
VDSS VGSS
ID IDP PD PD PD EAS IAR Tch Tstg
30
V
±20
56
A
168
70
W
2.8
W
1.6
W
407
mJ
56
A
150
-55 to 150
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba S...
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