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GT45F123
Insulated Gate Bipolar Transistor
Description
GT45F123 TOSHIBA Insulated Gate Bipolar
Transistor
Silicon N Channel IGBT GT45F123 For PDP-TV Applications 5th generation (trench gate structure) IGBT Enhancement-mode Low input capacitance: Cies = 2700pF (typ.) Peak collector current: ICP = 200 A (max) TO-220SIS package Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emit...
Toshiba Semiconductor
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GT45F123
Insulated Gate Bipolar Transistor
- Toshiba Semiconductor
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