GT15M321

GT15M321 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15M321 HIGH POWER SWITCHING APPLICATIONS l The 4th Generation l FRD Included Between Emitter and Collector l Enhancement−Mode l High Speed l Low Saturation Voltage : tf = 0.20 µs (TYP.) (IC = 15 A) : VCE (sat) = 1.8V (TYP.) (IC = 15A) Unit: mm MAXIMUM RATINGS (Ta=25°C) CHARACTERISTIC Collector−Emitter Voltage Gate-Emitter Voltage Collector Current Emitter−Collector Foward Current Collector Power Dissipation (Tc = 25°C) Junction Temperature Storage Temperature Range DC 1ms DC 1ms SYMBOL VCES VGES IC ICP IF IFM PC Tj Tstg RATING 900 ±25 15 30 15 120 55 150 −55~150 UNIT V V A A W °C °C JEDEC JEITA TOSHIBA Weight: 5.8 g ― ― 2−16F1A EQUIVALENT CIRCUIT 1 2002-02-06 GT15M321 ELECTRICAL CHARACTERISTICS (Ta=25°C) CHARACTERISTIC Gate Leakage Current Collector Cut−off Current Gate-Emitter Cut−off Voltage Collector−Emitter Saturation Voltage Input Capacitance Rise Time Turn−on Time Switching Time Fall Time Turn−off Time Emitter-Collector Forward Voltage Reverse Recovery Time Thermal Resistance Thermal Resistance SYMBOL IGES ICES VGE (OFF) VCE (sat) Cies tr ton tf toff VF trr Rth (j−c) Rth (j−c) IEC = 15 A, VGE = 0 IF = 15 A, VGE = 0 di / dt = −20 A / µs IGBT Diode TEST CONDITION VGE = ±25 V, VCE = 0 VCE = 900 V, VGE = 0 IC = 15 mA, VCE = 5 V IC = 15 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz MIN ― ― 3.0 ― ― ― ― ― ― ― ― ― ― TYP. ― ― ― 1.8 1200 0.20 0.30 0.20 0.50 1.5 0.7 ― ― MAX ±500 1.0 6.0 2.5 ― ― ― 0...