GT40J121

Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) (5) TO-3P(N)IS (Toshiba package name) 3. Packaging and Internal Circuit GT40J121 TO-3P(N)IS 1: Gate 2: Collector 3: Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT40J121 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Collector current (100 µs) VCES 600 V VGES ±25 IC 40 A ICP 80 100 Collector power dissipation Collector power dissipation Junction temperature Storage temperature Mounting torque (Tc = 100) (Tc = 25) (Note 1) PC Tj Tstg TOR 32 80 150 -55 to 150 0.6 W  Nm Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Plea...