GT40J321

GT40J321 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J321 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.11 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 2.0 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms DC 1ms Symbol VCES VGES IC ICP IF IFP PC Tj Tstg Rating 600 ± 25 40 100 30 60 120 150 −55 to 150 Unit V V A Diode forward current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature A JEDEC W °C °C ⎯ ⎯ 2-16C1C JEITA TOSHIBA Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking TOSHIBA Gate 40J321 Part No. (or abbreviation code) Lot No. Note 1 Emitter 1 2009-08-10 GT40J321 Electrical Characteristics...