GT40J322

GT40J322 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT40J322 Current Resonance Inverter Switching Application FRD included between emitter and collector Enhancement mode type High-speed IGBT: tf = 0.20 μs (typ.) (IC = 40 A) Low saturation voltage: VCE (sat) = 1.7 V (typ.) (IC = 40 A) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage DC Collector current 1ms DC Diode forward current 1ms Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature VCES VGES IC ICP IF IFP PC Tj Tstg 600 V ± 25 V 40 A 100 30 A 60 120 W 150 °C −55 to 150 °C JEDEC ⎯ JEITA ⎯ TOSHIBA 2-16C1C Weight: 4.6 g (typ.) Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). Equivalent Circuit Collector Marking Gate Emitter TOSHIBA 40J322 Part No. (or abbreviation code) Lot No. Note 1 Start of commercial production ...