GT50J121

GT50J121 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT50J121 High Power Switching Applications Fast Switching Applications The 4th generation Enhancement-mode Fast switching (FS): Operating frequency up to 50 kHz (reference) High speed: tf = 0.05 µs (typ.) Low switching loss : Eon = 1.30 mJ (typ.) : Eoff = 1.34 mJ (typ.) Low saturation Voltage: VCE (sat) = 2.0 V (typ.) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 50 100 240 150 −55 to 150 Unit V V A W °C °C JEDEC JEITA TOSHIBA Weight: 9.75 g ― ― 2-21F2C Thermal Characteristics Characteristics Thermal resistance Symbol Rth (j-c) Max 0.521 Unit °C/W 1 2002-03-18 GT50J121 Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Turn-on delay time Rise time Switching time Turn-on time Turn-off delay time Fall time Turn-off time Turn-on switching loss Turn-off switching loss Symbol IGES ICES VGE (OFF) VCE (sat) Cies td (on) tr ton td (off) tf toff Eon Eoff Inductive load VCC = 300 V, IC = 50 A VGG = +15 V, RG = 13 Ω (Note 1) (Note 2) Test Condition VGE = ±20 V, VCE = 0 VCE = 600 V, VGE = 0 IC = 5 mA, VCE = 5 V IC = 50 A, VGE = 15 V VCE = 10 V, VGE =...