Document
GT80J101A
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101A
High Power Switching Applications
Unit: mm Enhancement-Mode High Speed: tf = 0.40 µs (max) (IC = 80 A) Low Saturation Voltage: VCE (sat) = 3.0 V (max) (IC = 80 A)
· · ·
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Collector current DC 1ms Symbol VCES VGES IC ICP PC Tj Tstg ¾ Rating 600 ±20 80 160 200 150 -55~150 0.8 Unit V V A W °C °C N·m
Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature Screw torque
JEDEC JEITA TOSHIBA
― ― 2-21F2C
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time Thermal resistance tf toff Rth (j-c) Symbol IGES ICES VGE (OFF) VCE (sat) (1) VCE (sat) (2) Cies tr ton 15 V 0 -15 V 3.75 9 VIN 33 W Test Condition VGE = ±25 V, VCE = 0 VCE = 600 V, VGE = 0 VCE = 5 V, IC = 80 mA IC = 10 A, VGE = 15 V IC = 80 A, VGE = 15 V VCE = 10 V, VGE = 0, f = 1 MHz
Weight: 9.75 g (typ.)
Min ¾ ¾ 3.0 ¾ ¾ ¾ Typ. ¾ ¾ ¾ ¾ 2.4 5500 0.3 0.5 0.25 0.7 ¾ Max ±500 1.0 6.0 2.0 3.0 ¾ 0.6 0.8 ms 0.40 1.0 0.625 °C/W Unit nA mA V V pF
¾
VOUT
¾ ¾
¾ ¾
VCC = 300 V
¾
1
2002-01-18
GT80J101A
IC - VCE
100 Tc = 25 °C 10
VCE - VGE
Common emitter Common emitter
(V)
15 20
10 8
Tc = -40°C 8 10 20 6 40 4 60 IC = 80 A
(A)
IC
60 6 40
20
5
Collector-emitter voltage
Collector current
VCE
VGE = 4 V 0 2 4 6 8 10
80
2
0
0 0
4
8
12
16
20
24
Collector-emitter voltage
VCE
(V)
Gate-emitter voltage VGE
(V)
VCE - VGE
10 Common emitter 10
VCE - VGE
Common emitter
(V)
Tc = 25°C 8 10 6 20 40 4 60 IC = 80 A
(V)
Tc = 125°C 8 10 6 20 40 4 60 2 IC = 80 A
VCE
Collector-emitter voltage
2
0 0
Collector-emitter voltage
VCE
4 8 12 16 20 24
0 0
4
8
12
16
20
24
Gate-emitter voltage VGE
(V)
Gate-emitter voltage VGE
(V)
IC - VGE
100 Common emitter 80 4 Common emitter
VCE (sat) - Tc
Collector-emitter saturation voltage VCE (sat) (V)
VCE = 5 V
VGE = 15 V 3 80 2 50 30 IC = 10 A
IC Collector current
(A)
60
40 Tc = 125°C 25 -40
1
20
0 0
2
4
6
8
10
12
0 -40
0
40
80
120
160
Gate-emitter voltage VGE
(V)
Case temperature Tc
(°C)
2
2002-01-18
GT80J101A
VCE, VGE - QG
Collector-emitter voltage VCE (V) (´10 V) Gate-emitter voltage VGE (V)
20 Common emitter 16 RL = 1.88 W Tc = 25°C 5 3 12 VCE = 150 V 8 100 50 10
Switching time – RG
Common emitter VCC = 300 V IC = 80 A VGG = ±15 V Tc = 25°C toff ton
Switching time
(ms)
1
tr tf
0.5 0.3
4
0 0
80
160
240
320 0.1 3 5 10 30 50 100 300 500
Gate charge
QG
(nC)
Gate resistance RG (W)
Switching time – IC
5 Common emitter 3 VCC = 300 V RG = 33 W VGG = ±15 V 10000 30000
C - VCE
(ms)
(pF)
Tc = 25°C 1
5000 3000
Cies
Switching time
0.5 0.3
toff ton tf tr 10 20 30 40 50 60 70 80
Capacitance C
1000 500 300 Common emitter VGE = 0 V f = 1 MHz Tc = 25°C 3 5 10 30 50 Cres 100 300 500 Coes
0.1 0
100 50 1
Collector current
IC
(A)
Collector-emitter voltage
VCE
(V)
Safe Operating Area
* Single Non-Repetitive Pulse Tc = 25°C Curves must be Derated Linearly with Increase in Temperature. 200 100 IC max (Pulsed) IC max (Continuous) DC Operation 1 ms * 10 ms * 100 ms *
(A)
Rth (t) - tw
102 Tc = 25 °C
IC
Transient thermal impedance Rth (t) (°C/W)
Collector current
101 100 10-1 10-2 10-3 10-5
30
10
3
10 ms * 1 ms *
1 1
3
10
30
100
300
1000
10-4
10-3
10-2
10-1
100
101
102
Collector-emitter voltage
VCE
(V)
Pulse width
tw
(s)
3
2002-01-18
GT80J101A
Reverse Bias SOA
300 100
(A) IC Collector current
30 10 3 1 0.3 0.1 0
Tj < = 125°C VGE = +15 V -0 RG = 33 W 100 200 300 400 500 600 700
Collector-emitter voltage
VCE
(V)
4
2002-01-18
GT80J101A
RESTRICTIONS ON PRODUCT USE
000707EAA
· TOSHIBA is continually working to improve the quality and reliability of its products. Nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. It is the responsibility of the buyer, when utilizing TOSHIBA products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such TOSHIBA products could cause loss of human life, bodily injury or damage to property. In developing your designs, please ensure that TOSHIBA products are used within specified operating ranges as set forth in the most recent TOSHIBA products specifications. Also, please keep in mind the precautions and conditions set forth in the “Handling Guide for Semiconductor Devices,” or “TOSHIBA Semiconductor Reliability Handbook” etc.. · The TOSHIBA products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, indus.