GT80J101B

GT80J101B TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT80J101B High Power Switching Applications Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.5 Tj Tstg  150 − 55~150 0.8 °C °C N·m W A Unit V V A Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C JEDEC JEITA TOSHIBA ? ? 2-21F2C Weight: 9.75 g (typ.) Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms). Refer to the graph of safe operating area for the detail. Thermal Characteristics Characteristics Thermal resistance , junction to case Symbol Rating Unit (Tc = 25°C) Thermal resistance , junction to air Rth (j-c) 0.625 °C/W (Ta = 25°C) Rth (j-a) 35.7 °C/W MARKING Part No. (or abbreviation code) TOSHIBA 80J101B Lot No. JAPAN A line indicates lead (Pb)-free package or lead (Pb)-free finish. 1 2006-06-05 GT80J101B Electrical Characteristics (Ta = 25°C) Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf (Note 2) toff  0.7...