GT80J101B
TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
...
GT80J101B
TOSHIBA Insulated Gate Bipolar
Transistor Silicon N Channel IGBT
GT80J101B
High Power Switching Applications
Enhancement mode type High speed: tf = 0.40 µs (max) (I C = 80 A) Low saturation voltage: V CE (sat) = 2.9 V (max) (I C = 80 A) Unit: mm
Maximum Ratings (Ta = 25°C)
Characteristics Collector-emitter voltage Gate-emitter voltage Continuous collector current @Tc = 100°C @Tc = 25°C Symbol VCES VGES IC ICP Rating 600 ± 20 33 80 160 80 PC 200 3.5 Tj Tstg 150 − 55~150 0.8 °C °C N·m W A Unit V V A
Pulsed collector current (Note 1) @Tc = 100°C Collector power dissipation Junction temperature Storage temperature Screw torque @Tc = 25°C @Ta = 25°C
JEDEC JEITA TOSHIBA
? ? 2-21F2C
Weight: 9.75 g (typ.)
Note 1: The Maximum rating of ICP=160A is limited by pulse (1ms). Refer to the graph of safe operating area for the detail.
Thermal Characteristics
Characteristics Thermal resistance , junction to case Symbol Rating Unit
(Tc = 25°C)
Thermal resistance , junction to air
Rth (j-c)
0.625
°C/W
(Ta = 25°C)
Rth (j-a)
35.7
°C/W
MARKING
Part No. (or abbreviation code) TOSHIBA
80J101B
Lot No.
JAPAN
A line indicates lead (Pb)-free package or lead (Pb)-free finish.
1
2006-06-05
GT80J101B
Electrical Characteristics (Ta = 25°C)
Characteristics Gate leakage current Collector cut-off current Gate-emitter cut-off voltage Collector-emitter saturation voltage Input capacitance Rise time Turn-on time Switching time Fall time Turn-off time tf (Note 2) toff 0.7...