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C3371 Dataheets PDF



Part Number C3371
Manufacturers Inchange Semiconductor
Logo Inchange Semiconductor
Description 2SC3371
Datasheet C3371 DatasheetC3371 Datasheet (PDF)

www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching · APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i VALU.

  C3371   C3371


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www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC3371 DESCRIPTION ·Collector-Emiiter Sustaining Voltage: VCEO(SUS)= 500V(Min.) ·Low Collector Saturation Voltage : VCE(sat)= 1.0V(Max.)@ IC= 8A ·High Speed Switching · APPLICATIONS ·Designed for power switching applications. ABSOLUTE MAXIMUM RATINGS (Ta=25℃) SYMBOL PARAMETER VCBO Collector-Base Voltage VCEO Collector-Emitter Voltage VEBO Emitter-Base Voltage w w w s c s .i VALUE 800 V 500 V 7 V 15 A 30 A 5 A UNIT n c . i m e IC Collector Current-Continuous ICM Collector Current-Peak IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature PC 200 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website:www.iscsemi.cn www.DataSheet4U.com INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC3371 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 0.5A; L= 25mH 500 V VCE(sat) VBE(sat) ICBO IEBO Collector-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.0 V Base-Emitter Saturation Voltage IC= 8A; IB= 1.6A B 1.5 V Collector Cutoff Current VCB= 800V; IE= 0 VEB= 5V; IC= 0 0.1 mA Emitter Cutoff Current 0.1 mA hFE-1 DC Current Gain IC= 0.1A; VCE= 5V hFE-2 DC Current Gain Switching Times; Resistive Load ton ts tf Turn-on Time Storage Time Fall Time w w s c s i . w IC= 8A; VCE= 5V n c . i m e 15 10 1.0 μs μs μs IC= 8A; IB1= -IB2= 1.6A; VCC= 200V 3.0 1.0 isc Website:www.iscsemi.cn .


DEH-P6950IB C3371 AD201-1.9AMT


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