TK100S04N1L

MOSFETs Silicon N-channel MOS (U-MOS-H) TK100S04N1L 1. Applications Automotive Switching Voltage Regulators Motor Drivers 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 1.9 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 1.5 to 2.5 V (VDS = 10 V, ID = 0.5 mA) 3. Packaging and Internal Circuit TK100S04N1L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source ©2016-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2013-01 2020-06-24 Rev.7.0 TK100S04N1L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 100 A Drain current (pulsed) (Note 1) IDP 200 Power dissipation (Tc = 25) (Note 2) PD 180 W Single-pulse avalanche energy (Note 3) EAS 114 mJ Single-pulse avalanche current (Note 3) IAS 100 A Channel temperature (Note 4) Tch 175  Storage temperature (Note 4) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability u...