Document
MOSFETs Silicon N-channel MOS (U-MOS)
TK50S04K3L
1. Applications
• Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators
2. Features
(1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA)
3. Packaging and Internal Circuit
TK50S04K3L
DPAK+
1: Gate 2: Drain (heatsink) 3: Source
Start of commercial production
2011-11
1
2014-08-04
Rev.3.0
TK50S04K3L
4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
40
V
Gate-source voltage
VGSS
±20
Drain current (DC)
(Note 1)
ID
50
A
Drain current (pulsed)
(Note 1)
IDP
100
Power dissipation
(Tc = 25)
PD
68
W
Single-pulse avalanche energy
(Note 2)
EAS
68
mJ
Avalanche current
IAR
50
A
Channel temperature
(Note 3)
Tch
175
Storage temperature
(Note 3)
Tstg
-55 to 175
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
5. Thermal Characteristics
Characteristics
Symbol
Max
Unit
Channel-to-case thermal resistance
Rth(ch-c)
2.2
/W
Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = 25 V, Tch = 25 (initial), L = 28 µH, RG = 1 Ω, IAR = 50 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101.
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2
2014-08-04
Rev.3.0
6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Min
Gate leakage current
IGSS
VGS = ±16 V, VDS = 0 V
Drain cut-off current
IDSS
VDS = 40 V, VGS = 0 V
Drain-source breakdown voltage
V(BR)DSS ID = 10 mA, VGS = 0 V
40
V(BR)DSX ID = 10 mA, VGS = -20 V
20
Gate threshold voltage
Vth
VDS = 10 V, ID = 1 mA
2.0
Drain-source on-resistance
RDS(ON) VGS = 6 V, ID = 25 A
VGS = 10 V, ID = 25 A
6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time)
Symbol
Test Condition
Min
Ciss
VDS = 10 V, VGS = 0 V, f = 1 MHz
Crss
Coss
tr
See Figure 6.2.1
ton
tf
toff
TK50S04K3L
Typ. Max Unit
±10
µA
10
V
3.0
6.2
10
mΩ
4.3
5.4
Typ. Max Unit
2010
pF
255
435
10
ns
21
14
46
Fig. 6.2.1 Switching Time Test Circuit
6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge
Symbol
Test Condition
Qg
VDD ≈ 32 V, VGS = 10 V, ID = 50 A
Qgs Qgd
Min Typ. Max Unit
42
nC
26
16
6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified)
Characteristics
Symbol
Test Condition
Reverse drain current (DC) Reverse drain current (pulsed) Diode forward voltage
(Note 4) (Note 4)
IDR IDRP VDSF
IDR = 50 A, VGS = 0 V
Reverse recovery time Reverse recovery charge
trr
IDR = 50 A, VGS = 0 V
Qrr
-dIDR/dt = 50 A/µs
Note 4: Ensure that the channel temperature does not exceed 175.
Min Typ. Max Unit
50
A
100
-1.2
V
38
ns
20
nC
3
2014-08-04
Rev.3.0
7. Marking (Note)
TK50S04K3L
Fig. 7.1 Marking
Note:
A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment.
4
2014-08-04
Rev.3.0
8. Characteristics Curves (Note)
TK50S04K3L
Fig. 8.1 ID - VDS
Fig. 8.2 ID - VDS
Fig. 8.3 ID - VGS
Fig. 8.4 VDS - VGS
Fig. 8.5 RDS(ON) - ID
Fig. 8.6 RDS(ON) - Ta
5
2014-08-04
Rev.3.0
TK50S04K3L
Fig. 8.7 IDR - VDS
F.