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TK50S04K3L Dataheets PDF



Part Number TK50S04K3L
Manufacturers Toshiba Semiconductor
Logo Toshiba Semiconductor
Description Silicon N-Channel MOSFET
Datasheet TK50S04K3L DatasheetTK50S04K3L Datasheet (PDF)

MOSFETs Silicon N-channel MOS (U-MOS) TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2.

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MOSFETs Silicon N-channel MOS (U-MOS) TK50S04K3L 1. Applications • Automotive • Motor Drivers • DC-DC Converters • Switching Voltage Regulators 2. Features (1) AEC-Q101 qualified (2) Low drain-source on-resistance: RDS(ON) = 4.3 mΩ (typ.) (VGS = 10 V) (3) Low leakage current: IDSS = 10 µA (max) (VDS = 40 V) (4) Enhancement mode: Vth = 2.0 to 3.0 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK50S04K3L DPAK+ 1: Gate 2: Drain (heatsink) 3: Source Start of commercial production 2011-11 1 2014-08-04 Rev.3.0 TK50S04K3L 4. Absolute Maximum Ratings (Note) (Ta = 25 unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) (Note 1) ID 50 A Drain current (pulsed) (Note 1) IDP 100 Power dissipation (Tc = 25) PD 68 W Single-pulse avalanche energy (Note 2) EAS 68 mJ Avalanche current IAR 50 A Channel temperature (Note 3) Tch 175  Storage temperature (Note 3) Tstg -55 to 175 Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test report and estimated failure rate, etc). 5. Thermal Characteristics Characteristics Symbol Max Unit Channel-to-case thermal resistance Rth(ch-c) 2.2 /W Note 1: Ensure that the channel temperature does not exceed 175. Note 2: VDD = 25 V, Tch = 25 (initial), L = 28 µH, RG = 1 Ω, IAR = 50 A Note 3: The definitions of the absolute maximum channel and storage temperatures are qualified per AEC-Q101. Note: This transistor is sensitive to electrostatic discharge and should be handled with care. 2 2014-08-04 Rev.3.0 6. Electrical Characteristics 6.1. Static Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Min Gate leakage current IGSS VGS = ±16 V, VDS = 0 V  Drain cut-off current IDSS VDS = 40 V, VGS = 0 V  Drain-source breakdown voltage V(BR)DSS ID = 10 mA, VGS = 0 V 40 V(BR)DSX ID = 10 mA, VGS = -20 V 20 Gate threshold voltage Vth VDS = 10 V, ID = 1 mA 2.0 Drain-source on-resistance RDS(ON) VGS = 6 V, ID = 25 A  VGS = 10 V, ID = 25 A  6.2. Dynamic Characteristics (Ta = 25 unless otherwise specified) Characteristics Input capacitance Reverse transfer capacitance Output capacitance Switching time (rise time) Switching time (turn-on time) Switching time (fall time) Switching time (turn-off time) Symbol Test Condition Min Ciss VDS = 10 V, VGS = 0 V, f = 1 MHz  Crss  Coss  tr See Figure 6.2.1  ton  tf  toff  TK50S04K3L Typ. Max Unit  ±10 µA  10   V    3.0 6.2 10 mΩ 4.3 5.4 Typ. Max Unit 2010  pF 255  435  10  ns 21  14  46  Fig. 6.2.1 Switching Time Test Circuit 6.3. Gate Charge Characteristics (Ta = 25 unless otherwise specified) Characteristics Total gate charge (gate-source plus gate-drain) Gate-source charge Gate-drain charge Symbol Test Condition Qg VDD ≈ 32 V, VGS = 10 V, ID = 50 A Qgs Qgd Min Typ. Max Unit  42  nC  26   16  6.4. Source-Drain Characteristics (Ta = 25 unless otherwise specified) Characteristics Symbol Test Condition Reverse drain current (DC) Reverse drain current (pulsed) Diode forward voltage (Note 4) (Note 4) IDR IDRP VDSF   IDR = 50 A, VGS = 0 V Reverse recovery time Reverse recovery charge trr IDR = 50 A, VGS = 0 V Qrr -dIDR/dt = 50 A/µs Note 4: Ensure that the channel temperature does not exceed 175. Min Typ. Max Unit   50 A   100   -1.2 V  38  ns  20  nC 3 2014-08-04 Rev.3.0 7. Marking (Note) TK50S04K3L Fig. 7.1 Marking Note: A line under a Lot No. identifies the indication of product Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2011/65/EU of the European Parliament and of the Council of 8 June 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. 4 2014-08-04 Rev.3.0 8. Characteristics Curves (Note) TK50S04K3L Fig. 8.1 ID - VDS Fig. 8.2 ID - VDS Fig. 8.3 ID - VGS Fig. 8.4 VDS - VGS Fig. 8.5 RDS(ON) - ID Fig. 8.6 RDS(ON) - Ta 5 2014-08-04 Rev.3.0 TK50S04K3L Fig. 8.7 IDR - VDS F.


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